| Project/Area Number |
26630297
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Kyushu University |
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Principal Investigator |
Arita Makoto 九州大学, 工学研究院, 助教 (30284540)
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| Co-Investigator(Renkei-kenkyūsha) |
MOTOOKA Teruaki 九州大学, 工学研究院, 教授 (50219979)
YAMAUCHI Takashi 九州大学, 工学研究院, 学術研究員 (70419620)
HATANO Mutsuko 東京工業大学, 理工学研究科, 教授 (00417007)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 走査プローブ顕微鏡 / ケルビンフォース顕微鏡 / 半導体 / キャリア密度 / 仕事関数 / KFM / キャリア濃度 |
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| Outline of Final Research Achievements |
The workfunction change in doped Si and Si-doped Ga2O3 was examined using Kelvin force microscopy (KFM). Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for relatively low doping concentrations while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases.
It is suggested that carrier density analysis using KFM may be a powerful tool for evaluating device structure having different carrier density areas on the surface.
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