Development of CNT-strain device with MEMS technique and electronic state control
| Project/Area Number |
26630300
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Keio University |
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Principal Investigator |
Maki Hideyuki 慶應義塾大学, 理工学部, 准教授 (10339715)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | カーボンナノチューブ / 半導体物性 / 光物性 / 歪 / バンドギャップ / ナノチューブ・フラーレン |
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| Outline of Final Research Achievements |
For conventional semiconducting materials, band-gap engineering is realized by the composition control and doping. In this study, we focused on carbon nanotubes as a new material for band-gap engineering. We developed a strain device with MEMS technology, and we established the band-gap modulation technique with strain. We fabricated the CNT-strain devices, and we observed the emission wavelength shift under strain.
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Report
(3 results)
Research Products
(11 results)
