Improvement of Thermoelectric Properties in Mg2Si by Strain State Control
Project/Area Number |
26630304
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Inorganic materials/Physical properties
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
FUNAKUBO Hiroshi 東京工業大学, 総合理工学研究科(研究院), 教授 (90219080)
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Co-Investigator(Kenkyū-buntansha) |
AKIYAMA Kensuke 神奈川県産業技術センター, 研究員 (70426360)
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Project Period (FY) |
2014-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
|
Keywords | Mg2Si / 熱電測定 / 格子歪 / 熱電特性 |
Outline of Final Research Achievements |
Effect of residual strain on the thermoelectric properties of Mg2Si films was investigated. Strain from 0.2% tensile to 0.4% compressive was successfully remained by changing the kinds of substrates. However, noticeable change was not detected. Mg-Ca-Si films were also prepared. Films with Si excess composition showed n-type conduction, while films with other composition showed p-type conduction. Thermoelectric properties strongly depend on film composition. However Ca-substituted Mg2Si did not show any noticeable improvement of thermoelectric properties.
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Report
(3 results)
Research Products
(26 results)
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[Presentation] Thermoelectric characterization of sputtered Ca-Mg-Si films2016
Author(s)
M. Uehara, M. Kurokawa, K. Akiyama, T. Shimizu, M. Matsushima, H. Uchida, Y. Kimura, and H. Funakubo
Organizer
EMA (Electronic Materials and Applications) 2016
Place of Presentation
DoubleTree by Hilton Orlando at Sea World (Orlando, Florida USA)
Year and Date
2016-01-20
Related Report
Int'l Joint Research
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