| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Outline of Final Research Achievements |
At first, I attempted to develop an effective ex-situ growth method for KFe2As2 film, which is quite difficult to grow because K with high vapor pressure is a main constituent. Through this development, I wanted to get a hint to grow films of compounds with ZrCuSiAs-type structure by in-situ pulsed laser deposition. By the developed technique, I succeeded in obtaining epitaxial films of KFe2As2.
According to this result, I explored growth method for a compound, SmFeAsO, with ZrCuSiAs-type structure by in-situ pulsed laser deposition technique. Optimizing the in-situ growth condition, I succeeded in obtaining the target material, F-doped SmFeAsO films (F is also a high vapor-pressure element.), exhibiting superconducting transition.
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