| Project/Area Number |
26630306
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | Ga2O3 / ワイドギャップ半導体 / レーザーアニール / エピタキシャル成長 / 低温結晶成長 / 酸化物薄膜 / 固相結晶化 / パルスレーザー堆積 / 低温成長 / セラミックス薄膜 / エピタキシャル薄膜 / 室温合成 / セラミックス / 酸化ガリウム / 薄膜成長 / 単結晶性薄膜 |
|---|
| Outline of Final Research Achievements |
Epitaxial crystallization of β-Ga2O3 thin films on NiO-buffered α-Al2O3 (0001) substrates via solid-phase crystallization of amorphous Ga2O3 thin films by KrF excimer laser annealing at room-temperature (RT) was examined. The results of X-ray and reflection high-energy electron diffraction measurements indicated that the epitaxial β-Ga2O3 (2(―)01) thin films were crystallized after RT-laser annealing. The optical bandgap of the epitaxial thin films was estimated to be 4.9 eV from the results of UV/Vis transmittance measurements. In the cathodoluminescence spectrum, UV green luminescence was observed for the epitaxial β-Ga2O3 thin film. These optical properties are similar to that of bulk β-Ga2O3.
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