Development of novel atomic-layer-deposition plasma PVD processes for efficient and high-rate reactive film-formation processes
| Project/Area Number |
26630335
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Composite materials/Surface and interface engineering
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
UCHIDA Giichiro 大阪大学, 接合科学研究所, 准教授 (90422435)
TAKENAKA Kosuke 大阪大学, 接合科学研究所, 助教 (60432423)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | プラズマ加工 / 反応性プラズマＰＶＤ製膜プロセス / 反応性制御 / 高速製膜 |
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| Outline of Final Research Achievements |
The research project has been carried out for development of advanced PVD technologies to realize enhancement of target-utilization efficiency and deposition rate via plasma-enhanced sputter-deposition process using inductively coupled high-density plasma sources sustained with low-inductance antenna. The results obtained in the present project have shown that the plasma-enhanced sputter-deposition process can be effective for enhancement of target-utilization efficiency and deposition rate as well as formation of high-quality films.
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Report
(3 results)
Research Products
(14 results)
