Exploring optoelectronic nanostructures for the enhancement and inhibitation of luminescence
| Project/Area Number |
26706003
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | Tohoku University |
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Principal Investigator |
Kojima Kazunobu 東北大学, 多元物質科学研究所, 准教授 (30534250)
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| Project Period (FY) |
2014-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2016: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2015: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2014: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Keywords | 発光増強 / 半導体光物性 / 窒化物半導体 / 量子効率 / 発光量子効率 / GaN / 内部量子効率 / ZnO / ワイドバンドギャップ半導体 / 酸化物半導体 / 微小共振器 |
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| Outline of Final Research Achievements |
A long fast-component photoluminescence lifetime of 2.07 ns at room temperature was obtained for the near-band-edge emission in an m-plane freestanding GaN crystal grown by hydride vapor phase epitaxy on a bulk GaN seed wafer synthesized by the ammonothermal method using an acidic mineralizer. Omnidirectional photoluminescence (ODPL) measurement was proposed to absolutely quantify the quantum efficiency of radiation (g) in crystals. A methodology for quantifying internal quantum efficiency from such experimentally obtained g is derived. A strategy for increasing the square of an overlap integral of electron and hole wavefunctions in polar c-plane AlGaN multiple quantum wells (MQWs) is proposed. By applying quadratic modulation to AlN mole fractions along the c-axis, local bandgap energies and concentrations of immobile charges induced by polarization discontinuity are simultaneously controlled throughout the MQW structure, and optimized band profiles are eventually achieved.
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Report
(5 results)
Research Products
(46 results)
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[Presentation] High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method2016
Author(s)
M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu
Organizer
9th International Conference on High Temperature Ceramic Matrix Composites (HTCMC-9) and Global Forum on Advanced Materials and Technologies for Sustainable Development (GFMAT 2016)
Place of Presentation
Toronto, Canada
Year and Date
2016-06-26
Related Report
Int'l Joint Research / Invited
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[Presentation] Low resistivity m-plane freestanding GaN substrate with very low point defect concentration grown by hydride vapor phase epitaxy on an ammonothermal GaN seed crystal2015
Author(s)
K. Kojima, K. Furusawa, E. Furukawa, M. Saito, Y. Tsukada, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F Chichibu
Organizer
The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
Place of Presentation
Act city Hamamatsu, Hamamatsu, Japan
Year and Date
2015-11-08
Related Report
Int'l Joint Research / Invited
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[Presentation] High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method2015
Author(s)
M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu
Organizer
The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
Place of Presentation
Act city Hamamatsu, Hamamatsu, Japan
Year and Date
2015-11-08
Related Report
Int'l Joint Research
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[Presentation] High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method2015
Author(s)
M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Yamazaki, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu
Organizer
The 11th International Conference on Nitride Semiconductors (ICNS-11)
Place of Presentation
Beijing, China
Year and Date
2015-08-30
Related Report
Int'l Joint Research
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[Presentation] High-Quality Bulk Crystal Growth of GaN by the Ammonothermal Method in a Supercritical NH3 Using Acidic Mineralizers2015
Author(s)
S. F. Chichibu, M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Yamazaki, Y. Kagamitani, R. Kayano, and T. Ishiguro
Organizer
Workshop on Frontier Photonic and Electronic Materials and Devices - 2015 German-Japanese-Spanish Joint Workshop
Place of Presentation
Shirankaikan, Kyoto, Japan
Year and Date
2015-07-11
Related Report
Int'l Joint Research / Invited
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[Presentation] High Quality and High Rate Bulk GaN Crystal Growth by Acidic Ammonothermal Method2014
Author(s)
M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Yamazaki, Y. Kagamitani, R. Kayano, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu
Organizer
2014 Materials Research Society Fall Meeting
Place of Presentation
ボストン
Year and Date
2014-11-30 – 2014-12-05
Related Report
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