| Budget Amount *help |
¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
Fiscal Year 2017: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2014: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
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| Outline of Final Research Achievements |
Aluminum nitride single crystal is a promising substrate material for AlGaN-based light emitting diodes. Recently, we have developed an original liquid phase epitaxial technique using a Ga-Al flux. In this project, the effects of growth conditions on the AlN growth were investigated. Moreover, nitrogen solubility of the Ga-Al flux and thermophysical properties of the Ga-Al flux were also investigated. Based on the results of this project, crystal growth mechanism for the Ga-Al liquid phase epitaxy was discussed.
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