Development of AlN growth technique using Ga-Al flux
Project/Area Number |
26706013
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Partial Multi-year Fund |
Research Field |
Crystal engineering
|
Research Institution | Tohoku University |
Principal Investigator |
|
Project Period (FY) |
2014-04-01 – 2018-03-31
|
Project Status |
Completed (Fiscal Year 2017)
|
Budget Amount *help |
¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
Fiscal Year 2017: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2014: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
|
Keywords | 液相成長 / 窒化アルミニウム / 融液熱物性 / エピタキシャル成長 / 結晶成長 / 結晶工学 / 金属生産工学 |
Outline of Final Research Achievements |
Aluminum nitride single crystal is a promising substrate material for AlGaN-based light emitting diodes. Recently, we have developed an original liquid phase epitaxial technique using a Ga-Al flux. In this project, the effects of growth conditions on the AlN growth were investigated. Moreover, nitrogen solubility of the Ga-Al flux and thermophysical properties of the Ga-Al flux were also investigated. Based on the results of this project, crystal growth mechanism for the Ga-Al liquid phase epitaxy was discussed.
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Report
(5 results)
Research Products
(32 results)