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Development of AlN growth technique using Ga-Al flux

Research Project

Project/Area Number 26706013
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypePartial Multi-year Fund
Research Field Crystal engineering
Research InstitutionTohoku University

Principal Investigator

Adachi Masayoshi  東北大学, 多元物質科学研究所, 助教 (90598913)

Project Period (FY) 2014-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
Fiscal Year 2017: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2014: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
Keywords液相成長 / 窒化アルミニウム / 融液熱物性 / エピタキシャル成長 / 結晶成長 / 結晶工学 / 金属生産工学
Outline of Final Research Achievements

Aluminum nitride single crystal is a promising substrate material for AlGaN-based light emitting diodes. Recently, we have developed an original liquid phase epitaxial technique using a Ga-Al flux. In this project, the effects of growth conditions on the AlN growth were investigated. Moreover, nitrogen solubility of the Ga-Al flux and thermophysical properties of the Ga-Al flux were also investigated. Based on the results of this project, crystal growth mechanism for the Ga-Al liquid phase epitaxy was discussed.

Report

(5 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • 2014 Annual Research Report
  • Research Products

    (32 results)

All 2018 2017 2016 2015 2014

All Journal Article (4 results) (of which Peer Reviewed: 3 results,  Acknowledgement Compliant: 2 results) Presentation (28 results) (of which Int'l Joint Research: 6 results,  Invited: 4 results)

  • [Journal Article] Non-Polar a-Plane AlN Growth on Nitrided r-Plane Sapphire by Ga-Al Liquid-Phase Epitaxy2018

    • Author(s)
      Adachi Masayoshi、Fukuyama Hiroyuki
    • Journal Title

      Physica Status Solidi B

      Volume: 印刷中 Issue: 5

    • DOI

      10.1002/pssb.201700478

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy2017

    • Author(s)
      Masaoyshi Adachi, Ryuta Sekiya, Hiroyuki Fukuyama
    • Journal Title

      MATERIALS TRANSACTIONS

      Volume: 58 Issue: 3 Pages: 509-512

    • DOI

      10.2320/matertrans.M2016413

    • NAID

      130005397732

    • ISSN
      1345-9678, 1347-5320
    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga-Al liquid-phase epitaxy2015

    • Author(s)
      Masayoshi Adachi, Mari Takasugi, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, and Hiroyuki Fukuyama
    • Journal Title

      Physica Status Solidi B

      Volume: 252 Issue: 4 Pages: 743-747

    • DOI

      10.1002/pssb.201451426

    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Ga-Alフラックスを用いたAlNの液相エピタキシャル成長2014

    • Author(s)
      福山博之,安達正芳
    • Journal Title

      日本結晶成長学会誌

      Volume: 41 Pages: 124-130

    • NAID

      130003388700

    • Related Report
      2014 Annual Research Report
  • [Presentation] 電磁浮遊法を用いた溶融Ni-AlからのAlN生成とその観察2018

    • Author(s)
      安達正芳,浜谷苑子,山片裕司,大塚誠,福山博之
    • Organizer
      応用物理学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 静磁場印加電磁浮遊法を用いた溶融Ni-Al合金からのAlN生成挙動観察2017

    • Author(s)
      浜谷苑子,佐藤明香輪,安達正芳,福山博之
    • Organizer
      日本金属学会春季講演大会
    • Place of Presentation
      首都大学東京(東京都,八王子市)
    • Year and Date
      2017-03-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ga-Al融液を用いたAlN結晶気相成長法における炉内圧力が結晶成長に及ぼす影響2017

    • Author(s)
      高橋慧伍,安達正芳,福山博之
    • Organizer
      日本金属学会春季講演大会
    • Place of Presentation
      首都大学東京(東京都,八王子市)
    • Year and Date
      2017-03-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] Liquid phase epitaxial growth of AlN layer on nitrided sapphire templates using Ga-Al solution2017

    • Author(s)
      Masayoshi Adachi, Hiroyuki Fukuyama
    • Organizer
      3rd Intensive Discussion on Growth of Nitride Semiconductors
    • Place of Presentation
      東北大学(宮城県,仙台市)
    • Year and Date
      2017-01-16
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] a-plane AlN layer fabricated by Ga-Al liquid phase epitaxy on nitrided r-plane sapphire substrate with off-cut angle2017

    • Author(s)
      Masayoshi Adachi, Hiroyuki Fukuyama
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] In-situ observation of AlN formation from Ni-Al melts2017

    • Author(s)
      Sonoko Hamaya, Akari Sato, Masayoshi Adachi, Hiroyuki Fukuyama
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 静磁場印加電磁浮遊法を用いた溶融Ni-Al合金からのAlN生成挙動観察2017

    • Author(s)
      浜谷苑子,佐藤明香輪,安達正芳,福山博之
    • Organizer
      日本金属学会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Fabrication of a-plane AlN on r-plane sapphire substrate by sapphire nitridation and Ga-Al liquid phase epitaxy2016

    • Author(s)
      Masayoshi Adachi, Hiroyuki Fukuyama
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Nitrogen Solubility Measurement of Ga-Al Melts by a Chemical Equilibrium Method2016

    • Author(s)
      Zaka Ruhma, 安達正芳,小畠秀和,福山博之
    • Organizer
      日本金属学会秋季講演大会
    • Place of Presentation
      大阪大学(大阪府,豊中市)
    • Year and Date
      2016-09-21
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ga-Al融液を原料とする減圧下でのAlN気相成長2016

    • Author(s)
      高橋慧伍,安達正芳,福山博之
    • Organizer
      日本金属学会秋季講演大会
    • Place of Presentation
      大阪大学(大阪府,豊中市)
    • Year and Date
      2016-09-21
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ni-Al系溶融合金からのAlN生成挙動のその場観察2016

    • Author(s)
      浜谷苑子,佐藤明香輪,安達正芳,福山博之
    • Organizer
      日本金属学会秋季講演大会
    • Place of Presentation
      大阪大学(大阪府,豊中市)
    • Year and Date
      2016-09-21
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ga-Al液相法によるr面サファイア上へのa面AlN膜作製2016

    • Author(s)
      安達正芳,福山博之
    • Organizer
      応用物理学会 秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県,新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Surface nitridation of r-plane sapphire substrate and Ga-Al solution growth of AlN on the substrate2016

    • Author(s)
      Masayoshi Adachi, Hiroyuki Fukuyama
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場(愛知県,名古屋市)
    • Year and Date
      2016-08-07
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] r面サファイアの窒化によるa面AlN薄膜の形成とGa-Al液相法によるその厚膜化2016

    • Author(s)
      安達正芳,福山博之
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会 第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学(京都府,京都市)
    • Year and Date
      2016-05-09
    • Related Report
      2016 Annual Research Report
  • [Presentation] Ga-Al 液相法を用いた窒化サファイア基板上へのAlN成長と極性反転2016

    • Author(s)
      安達正芳
    • Organizer
      日本鉄鋼協会 H27年度高温プロセス部会若手フォーラム研究会
    • Place of Presentation
      東京都市大学(東京都,世田谷区)
    • Year and Date
      2016-02-12
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Effects of growth temperature and solution composition on AlN layer grown by Ga-Al liquid phase epitaxy2015

    • Author(s)
      Masayoshi Adachi, Ryuta Sekiya, and Hiroyuki Fukuyama
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      アクトシティ浜松(静岡県,浜松市)
    • Year and Date
      2015-11-08
    • Related Report
      2015 Annual Research Report
  • [Presentation] Ga-Alを用いたAlN液相成長における成長条件と成長速度2015

    • Author(s)
      安達正芳,関谷竜太
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県,名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Wettability measurement of nitrided sapphire substrate by Ga-Al solution using a sessile drop method2015

    • Author(s)
      Masayoshi Adachi, Kosuke Yasutake, Noritaka Saito, Kunihiko Nakashima, and Hiroyuki Fukuyama
    • Organizer
      19th Symposium on Thermophysical Properties
    • Place of Presentation
      Boulder, CO(USA)
    • Year and Date
      2015-06-21
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of misorientation angles of a-plane sapphire substrates on crystal quality and surface morphorogy of AlN film grown by nitridation method2015

    • Author(s)
      Zaka Ruhma, Makoto Ohtsuka, Masayoshi Adachi, and Hiroyuki Fukuyama
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会 2015年春季講演大会 第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学(宮城県,仙台市)
    • Year and Date
      2015-05-07
    • Related Report
      2015 Annual Research Report
  • [Presentation] Ga-Al液相成長法により成長したAlNの極性反転構造2015

    • Author(s)
      安達正芳,福山博之
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会 2015年春季講演大会 第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学(宮城県,仙台市)
    • Year and Date
      2015-05-07
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] 静滴法を用いた窒化サファイア基板のGa-Al融液に対する濡れ角測定2015

    • Author(s)
      安達正芳,安武晃佑,齊藤敬高,中島邦彦,杉山正史,飯田潤二,福山博之
    • Organizer
      応用物理学会 第62回春季学術講演会
    • Place of Presentation
      神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] Ga-Alフラックス法を用いた窒化サファイア基板上AlN膜成長2014

    • Author(s)
      安達正芳,福山博之
    • Organizer
      ナノマクロ物質・デバイス・システム創製アライアンス 第2回若手研究交流会
    • Place of Presentation
      大阪
    • Year and Date
      2014-11-26 – 2014-11-27
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Ga-Alを用いたAlN液相成長における酸素取り込みと極性反転2014

    • Author(s)
      安達正芳,杉山正史,飯田潤二,福山博之
    • Organizer
      結晶成長学会 第44回結晶成長国内会議
    • Place of Presentation
      東京
    • Year and Date
      2014-11-06 – 2014-11-08
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 窒化サファイア基板上Alスパッタ膜の高温窒化挙動のその場観察2014

    • Author(s)
      藤原圭吾,安達正芳,大塚誠,福山博之
    • Organizer
      日本金属学会 2014年秋季講演大会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-09-24 – 2014-09-26
    • Related Report
      2014 Annual Research Report
  • [Presentation] Ga-Alフラックスを用いたAlN液相成長における炭素添加の影響2014

    • Author(s)
      安達正芳,関谷竜太,杉山正史,飯田潤二,福山博之
    • Organizer
      応用物理学会 第75回秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Ga-Alフラックスを用いた液相成長法による低酸素分圧下でのAl極性AlN膜の作製2014

    • Author(s)
      関谷竜太,安達正芳,大塚誠,杉山正史,飯田潤二,福山博之
    • Organizer
      応用物理学会 第75回秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Growth model of AlN layer on nitrided sapphire substrate by liquid phase epitaxy using Ga-Al solution2014

    • Author(s)
      Ryuta Sekiya, Mari Takasugi, Masayoshi Adachi, Makoto Ohtsuka, Masashi Sugiyama, Junji Iida, Hiroyuki Fukuyama
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wrockawm, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Related Report
      2014 Annual Research Report
  • [Presentation] Ga-Alフラックスを用いたAlN液相成長におけるフラックス組成の影響2014

    • Author(s)
      関谷竜太,安達正芳,大塚誠,杉山正史,飯田潤二,福山博之
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会 2014窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25 – 2014-07-26
    • Related Report
      2014 Annual Research Report

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Published: 2014-04-04   Modified: 2019-03-29  

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