Development of new graphene production method based on SiC
| Project/Area Number |
26706014
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
Norimatsu Wataru 名古屋大学, 工学(系)研究科(研究院), 助教 (30409669)
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| Research Collaborator |
KUSUNOKI Michiko
BAO Jianfeng
MATSUDA Keita
MASUMORI Atsushi
MIYAMOTO Genki
TSURUTA Haruka
FUKUI Mai
TAKATA Nao
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥24,050,000 (Direct Cost: ¥18,500,000、Indirect Cost: ¥5,550,000)
Fiscal Year 2016: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2015: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
Fiscal Year 2014: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000)
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| Keywords | グラフェン / 表面・界面物性 / 表面物性 / エピタキシャル成長 |
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| Outline of Final Research Achievements |
In this research project, I aimed to grow graphene with various properties by thermal decomposition of the carbide thin film grown on the SiC substrate. For example, graphene grown from the aluminum carbide on SiC was suggested to be aluminum-doped. As another example, graphene grown from the boron carbide on SiC was characterized by heavy boron-doping and the spin glass behavior was observed. Thus, graphene grown by thermal decomposition of the carbide film is a promising technique to obtain graphene with the novel structures and properties.
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Report
(4 results)
Research Products
(69 results)
