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Study on Ga2O3 based heterojunction for device applications

Research Project

Project/Area Number 26709020
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypePartial Multi-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionSaga University (2016)
Tokyo Institute of Technology (2014-2015)

Principal Investigator

Oshima Takayoshi  佐賀大学, 工学(系)研究科(研究院), 助教 (60583151)

Project Period (FY) 2014-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2016: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2015: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2014: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Keywords酸化ガリウム / ヘテロ接合 / 変調ドープ / 結晶成長 / 半導体物性 / 半導体デバイス / エピタキシャル成長 / 半導体ヘテロ接合 / バンドアラインメント
Outline of Final Research Achievements

For future realization of Ga2O3-based heterojunction devise, we compared two growth techniques of PLD and MBE, measured a band-alignment of (Al,Ga)2O3/Ga2O3 heterojunction, and evaluated electrical properties of modulation-doped (Al,Ga)2O3/ Ga2O3 structure. We found that MBE was better suited for obtaining flat film surface. While the (Al,Ga)2O3/Ga2O3 was found to be the Type I junction with 2:1 conduction-valence band discontinuity ratio. Furthermore, carrier confinement at the modulation-doped heterojunction was observed for the first time in the Ga2O3-based semiconductor. These findings suggest the future realization of Ga2O3 heterojunction devices.

Report

(4 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Annual Research Report
  • 2014 Annual Research Report
  • Research Products

    (45 results)

All 2017 2016 2015 2014 Other

All Journal Article (6 results) (of which Peer Reviewed: 6 results,  Acknowledgement Compliant: 3 results,  Open Access: 2 results) Presentation (36 results) (of which Int'l Joint Research: 11 results,  Invited: 8 results) Remarks (3 results)

  • [Journal Article] Epitaxial growth of γ-(AlxGa1-x)O3 alloy films for band-gap engineering2017

    • Author(s)
      Takayoshi Oshima, Yuji Kato, Masaya Oda, Toshimi Hitora, and Makoto Kasu
    • Journal Title

      Applied Physics Express

      Volume: 印刷中

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface2017

    • Author(s)
      Takayoshi Oshima, Yuji Kato, Naoto Kawano, Akito Kuramata, Shigenobu Yamakoshi, Shizuo Fujita, Toshiyuki Oishi, and Makoto Kasu
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 3 Pages: 035701-035701

    • DOI

      10.7567/apex.10.035701

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Formation of indium-tin oxide ohmic contacts for β-Ga2O32016

    • Author(s)
      T. Oshima, R. Wakabayashi, M. Hattori, A. Hashiguchi, N. Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, T. Oishi, M. Kasu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202B7-1202B7

    • DOI

      10.7567/jjap.55.1202b7

    • NAID

      210000147267

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Epitaxial growth and electric properties of γ-Al2O3 (110) films on β-Ga2O3 (010) substrates2016

    • Author(s)
      M. Hattori, T. Oshima, R. Wakabayashi, K. Yoshimatsu, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Horiba, H. Kumigashira, A. Ohtomo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202B6-1202B6

    • DOI

      10.7567/jjap.55.1202b6

    • NAID

      210000147266

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1-x)2O3 films2015

    • Author(s)
      Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo
    • Journal Title

      Journal of Crystal Growth

      Volume: 424 Pages: 77-79

    • DOI

      10.1016/j.jcrysgro.2015.05.005

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition2015

    • Author(s)
      Takayoshi Oshima, Kentarou Matsuyama, Kohei Yoshimatsu, Akira Ohtomo
    • Journal Title

      Journal of Crystal Growth

      Volume: 421 Pages: 23-26

    • DOI

      10.1016/j.jcrysgro.2015.04.011

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Presentation] Band-gap engineering of metastable γ-(AlxGa1-x)2O3 alloy system2017

    • Author(s)
      Takayoshi Oshima, Yuji Kato, Masaya Oda, Toshimi Hitora, and Makoto Kasu
    • Organizer
      Compound Semiconductor Week 2017, Berlin, Germany
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2017-05-14
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Successful modulation-doping for β-(AlxGa1-x)2O3/β-Ga2O3 system2017

    • Author(s)
      Takayoshi Oshima, Yuji Kato, Naoto Kawano; Akito Kuramata, Shigenobu Yamakoshi; Shizuo Fujita; Toshiyuki Oishi, and Makoto Kasu
    • Organizer
      Compound Semiconductor Week 2017, Berlin, Germany
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2017-05-14
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth and characterization of (Al,Ga)2O3-based alloy and heterostructures2017

    • Author(s)
      Takayoshi Oshima
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2017-04-19
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] (001)β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係2017

    • Author(s)
      橋口明広,森林朋也,大島孝仁,大石敏之,輿公祥,佐々木公平,倉又朗人,上田修,嘉数誠
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,神奈川県
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] (-201)β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係2017

    • Author(s)
      森林朋也,橋口明広,大島孝仁,花田賢志,大石敏之,輿公祥,佐々木公平,倉又朗人,上田修,嘉数誠
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,神奈川県
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] γ-(AlxGa1-x)2O3混晶系におけるバンドギャップ制御2017

    • Author(s)
      加藤勇次,大島孝仁,織田真也,人羅俊実,嘉数誠
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,神奈川県
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] β-(AlxGa1-x)2O3/β-Ga2O3ヘテロ接合界面におけるキャリア閉じ込めの観察2017

    • Author(s)
      加藤勇次,大島孝仁,河野直士,倉又朗人,山腰茂伸,藤田静雄,大石敏之,嘉数誠
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,神奈川県
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] EFG法β型酸化ガリウムの結晶欠陥とSBD素子特性との関連2017

    • Author(s)
      嘉数誠,花田賢志,大島孝仁
    • Organizer
      日本学術振興会結晶成長の科学と技術第161委員会第98回委員会
    • Place of Presentation
      長浜ロイヤルホテル,滋賀県
    • Year and Date
      2017-03-14
    • Related Report
      2016 Annual Research Report
  • [Presentation] 酸化ガリウム系ヘテロ接合界面におけるキャリア閉じ込めの観察2017

    • Author(s)
      大島孝仁,加藤勇次,河野直士,倉又朗人,山腰茂伸,藤田静雄,大石敏之,嘉数誠
    • Organizer
      電気学会 電子デバイス研究会 次世代化合物半導体デバイスの機能と応用
    • Place of Presentation
      絹の渓谷碧流,栃木県
    • Year and Date
      2017-03-09
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] β-Ga2O3ショットキーバリアダイオードのリーク電流と結晶欠陥との関係2016

    • Author(s)
      橋口明広,森林朋也,花田賢志,大島孝仁,大石敏之,輿公祥,佐々木公平,倉又朗人,上田修,嘉数誠
    • Organizer
      2016年第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟県
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] 酸化ガリウムダイオードを用いたレクテナ回路動作2016

    • Author(s)
      河野直士,大島孝仁,嘉数誠,大石敏之
    • Organizer
      2016年第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟県
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] β-Ga2O3用ITOオーミック電極2016

    • Author(s)
      大島孝仁,若林諒,服部真依,橋口明広,河野直士,佐々木公平,増井建和,倉又朗人,山腰茂伸,吉松公平,大友明,大石敏之,嘉数誠
    • Organizer
      2016年第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟県
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] PLD and MBE growth of Ga2O3 and (AlxGa1-x)2O32016

    • Author(s)
      Takayoshi Oshima
    • Organizer
      German-Japanese Gallium Oxide Technology Meeting 2016
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2016-09-07
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ITO ohmic contacts for β-Ga2O32016

    • Author(s)
      Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi, and Makoto Kasu
    • Organizer
      German-Japanese Gallium Oxide Technology Meeting 2016
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2016-09-07
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] γ型酸化ガリウム系半導体の開拓研究2016

    • Author(s)
      大島孝仁
    • Organizer
      第3回学産交流ポスターセッション
    • Place of Presentation
      新化学技術推進協会会議室,東京
    • Related Report
      2016 Annual Research Report
  • [Presentation] 酸化ガリウム系半導体の薄膜成長2016

    • Author(s)
      大島孝仁
    • Organizer
      第1回ISYSE 研究会
    • Place of Presentation
      広島大学
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Mist CVD法の基礎と応用2016

    • Author(s)
      大島孝仁
    • Organizer
      日本学術振興会透明酸化物光・電子材料第166委員会第72回研究会
    • Place of Presentation
      田町キャンパスイノベーションセンター,東京都
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Epitaxial growth of gamma-phase Ga2O3 semiconductor2015

    • Author(s)
      Takayoshi Oshima
    • Organizer
      Energy Materials Nanotechnology collaborative conference on Crystal Growth 2015
    • Place of Presentation
      Hong Kong, China
    • Year and Date
      2015-12-14
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Evaluation of band offset at β-(AlxGa1-x)2O3/β-Ga2O32015

    • Author(s)
      Mai Hattori, Ryo Wakabayashi, Takayoshi Oshima, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Hiroshi Horiba, Hiroshi Kumigashira, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      The 1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto University, Japan
    • Year and Date
      2015-11-03
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Epitaxial relationship and capacitance-voltage characteristics of γ-Al2O3 films grown on (010) β-Ga2O3 substrates2015

    • Author(s)
      Mai Hattori, Takayoshi Oshima, Ryo Wakabayashi, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      The 1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto University, Japan
    • Year and Date
      2015-11-03
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Strong Fermi-level pinning at metal β-Ga2O3(-201) interface2015

    • Author(s)
      Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      The 1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto University, Japan
    • Year and Date
      2015-11-03
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth and electric properties of conductive β-(AlxGa1-x)2O3 films2015

    • Author(s)
      Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      The 1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto University, Japan
    • Year and Date
      2015-11-03
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] N-type Doping of γ-Ga2O3 epitaxial films2015

    • Author(s)
      Takayoshi Oshima, Keitaro Matsuyama, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      The 1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto University, Japan
    • Year and Date
      2015-11-03
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 酸化ガリウムの研究とエレクトロニクスへの応用2015

    • Author(s)
      大島孝仁
    • Organizer
      グリーンエレクトロニクス研究所セミナー
    • Place of Presentation
      佐賀大学
    • Year and Date
      2015-10-21
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] β-Ga2O3上γ-Al2O3膜のエピタキシャル構造と容量電圧特性評価2015

    • Author(s)
      服部真依, 若林諒, 大島孝仁, 佐々木公平, 増井建和, 倉又朗人, 山腰茂伸, 吉松公平, 大友明
    • Organizer
      2015年第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-10-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] 金属/β-Ga2O3 (201)界面における強いフェルミ準位ピンニング効果2015

    • Author(s)
      若林諒, 大島孝仁, 服部真依, 佐々木公平, 増井建和, 倉又朗人, 山腰茂伸, 吉松公平, 大友明
    • Organizer
      2015年第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-10-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Type-I band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 heterojunctions2015

    • Author(s)
      Takayoshi Oshima, Mai Hattori, Ryo Wakabayashi, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Hiroshi Horiba, Hiroshi Kumigashira, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      34th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2015-07-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3-based films2015

    • Author(s)
      Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      34th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2015-07-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] β-(AlxGa1-x)2O3/β-Ga2O3ヘテロ接合のバンドオフセット評価2015

    • Author(s)
      服部真依,若林諒,大島孝仁,佐々木公平,増井健和,倉又朗人,山腰茂伸,堀場弘司,組頭広志,吉松公平,大友明
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学(神奈川県・平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] 酸素ラジカル支援PLD法による酸化ガリウム系混晶薄膜の成長2015

    • Author(s)
      若林諒,服部真依,大島孝仁,佐々木公平,増井建和,倉又朗人,山腰茂伸,吉松公平,大友明
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学(神奈川県・平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] Oxygen-radical-assisted pulsed-laser deposition of β-(AlxGa1-x)2O3 alloy films2014

    • Author(s)
      Ryo Wakabayashi, Mai Hattori, Takayoshi Oshima, Akira Mukai, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
    • Organizer
      The First E-MRS/MRS-J Bilateral Symposia
    • Place of Presentation
      横浜市開港記念会館(神奈川・横浜市)
    • Year and Date
      2014-12-10 – 2014-12-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] 伝導性γ相酸化ガリウム薄膜の作製2014

    • Author(s)
      松山慶太朗,大島孝仁,吉松公平,大友明
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(札幌市・北区)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Optical applications of wide-band-gap gallium oxide2014

    • Author(s)
      Takayoshi Oshima
    • Organizer
      23rd Congress and General Assembly of the International Union of Crystallography
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2014-08-05 – 2014-08-12
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Epitaxial growth of ZnGa2O4 films by mist chemical vapor deposition2014

    • Author(s)
      Mifuyu Niwa, Takayoshi Oshima, Akira Mukai, Tomohito Nagami, Toshihisa Suyama, and Akira. Ohtomo
    • Organizer
      The 8th International Conference on the Science and Technology for Advanced Ceramics
    • Place of Presentation
      メルパルク横浜(神奈川・横浜市)
    • Year and Date
      2014-06-25 – 2014-06-27
    • Related Report
      2014 Annual Research Report
  • [Presentation] Epitaxial growth of wide-band-gap ZnGa2O4 films2014

    • Author(s)
      Takayoshi Oshima, Mifuyu Niwa, Akira Mukai, Tomohito Nagami, Toshihisa Suyama, and Akira Ohtomo
    • Organizer
      The 41th International Symposium on Compound Semiconductor
    • Place of Presentation
      Montpellier. France
    • Year and Date
      2014-05-12 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] β-Ga2O3 photoeledtrode for water splitting2014

    • Author(s)
      Takayoshi Oshima, Kenichi Kaminaga, Hisanori Mashiko, Akira Mukai, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, and Akira Ohtomo
    • Organizer
      The 41th International Symposium on Compound Semiconductor
    • Place of Presentation
      Montpellier. France
    • Year and Date
      2014-05-12 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Remarks] 個人ページ

    • URL

      http://www.ee.saga-u.ac.jp/pelab/oshima/publication.html

    • Related Report
      2015 Annual Research Report
  • [Remarks] Tokyo Tech Research Repository

    • URL

      http://t2r2.star.titech.ac.jp/cgi-bin/researcherinfo.cgi?q_researcher_content_number=CTT100604106

    • Related Report
      2014 Annual Research Report
  • [Remarks] 研究者Webページ

    • URL

      http://www.apc.titech.ac.jp/~aohtomo/member_list/oshima/oshima_index.html

    • Related Report
      2014 Annual Research Report

URL: 

Published: 2014-04-04   Modified: 2018-03-22  

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