Study on Ga2O3 based heterojunction for device applications
Project/Area Number |
26709020
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Partial Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | Saga University (2016) Tokyo Institute of Technology (2014-2015) |
Principal Investigator |
Oshima Takayoshi 佐賀大学, 工学(系)研究科(研究院), 助教 (60583151)
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Project Period (FY) |
2014-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2016: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2015: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2014: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
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Keywords | 酸化ガリウム / ヘテロ接合 / 変調ドープ / 結晶成長 / 半導体物性 / 半導体デバイス / エピタキシャル成長 / 半導体ヘテロ接合 / バンドアラインメント |
Outline of Final Research Achievements |
For future realization of Ga2O3-based heterojunction devise, we compared two growth techniques of PLD and MBE, measured a band-alignment of (Al,Ga)2O3/Ga2O3 heterojunction, and evaluated electrical properties of modulation-doped (Al,Ga)2O3/ Ga2O3 structure. We found that MBE was better suited for obtaining flat film surface. While the (Al,Ga)2O3/Ga2O3 was found to be the Type I junction with 2:1 conduction-valence band discontinuity ratio. Furthermore, carrier confinement at the modulation-doped heterojunction was observed for the first time in the Ga2O3-based semiconductor. These findings suggest the future realization of Ga2O3 heterojunction devices.
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Report
(4 results)
Research Products
(45 results)
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[Journal Article] Formation of indium-tin oxide ohmic contacts for β-Ga2O32016
Author(s)
T. Oshima, R. Wakabayashi, M. Hattori, A. Hashiguchi, N. Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, T. Oishi, M. Kasu
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Journal Title
Japanese Journal of Applied Physics
Volume: 55
Issue: 12
Pages: 1202B7-1202B7
DOI
NAID
Related Report
Peer Reviewed / Open Access
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[Journal Article] Epitaxial growth and electric properties of γ-Al2O3 (110) films on β-Ga2O3 (010) substrates2016
Author(s)
M. Hattori, T. Oshima, R. Wakabayashi, K. Yoshimatsu, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Horiba, H. Kumigashira, A. Ohtomo
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Journal Title
Japanese Journal of Applied Physics
Volume: 55
Issue: 12
Pages: 1202B6-1202B6
DOI
NAID
Related Report
Peer Reviewed / Open Access / Acknowledgement Compliant
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[Presentation] ITO ohmic contacts for β-Ga2O32016
Author(s)
Takayoshi Oshima, Ryo Wakabayashi, Mai Hattori, Akihiro Hashiguchi, Naoto Kawano, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, Akira Ohtomo, Toshiyuki Oishi, and Makoto Kasu
Organizer
German-Japanese Gallium Oxide Technology Meeting 2016
Place of Presentation
Berlin, Germany
Year and Date
2016-09-07
Related Report
Int'l Joint Research
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[Presentation] Evaluation of band offset at β-(AlxGa1-x)2O3/β-Ga2O32015
Author(s)
Mai Hattori, Ryo Wakabayashi, Takayoshi Oshima, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Hiroshi Horiba, Hiroshi Kumigashira, Kohei Yoshimatsu, and Akira Ohtomo
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
Kyoto University, Japan
Year and Date
2015-11-03
Related Report
Int'l Joint Research
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[Presentation] Strong Fermi-level pinning at metal β-Ga2O3(-201) interface2015
Author(s)
Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
Kyoto University, Japan
Year and Date
2015-11-03
Related Report
Int'l Joint Research
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[Presentation] Growth and electric properties of conductive β-(AlxGa1-x)2O3 films2015
Author(s)
Ryo Wakabayashi, Takayoshi Oshima, Mai Hattori, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Kohei Yoshimatsu, and Akira Ohtomo
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
Kyoto University, Japan
Year and Date
2015-11-03
Related Report
Int'l Joint Research
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[Presentation] N-type Doping of γ-Ga2O3 epitaxial films2015
Author(s)
Takayoshi Oshima, Keitaro Matsuyama, Kohei Yoshimatsu, and Akira Ohtomo
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
Kyoto University, Japan
Year and Date
2015-11-03
Related Report
Int'l Joint Research
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[Presentation] Type-I band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 heterojunctions2015
Author(s)
Takayoshi Oshima, Mai Hattori, Ryo Wakabayashi, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, Hiroshi Horiba, Hiroshi Kumigashira, Kohei Yoshimatsu, and Akira Ohtomo
Organizer
34th Electronic Materials Symposium
Place of Presentation
ラフォーレ琵琶湖
Year and Date
2015-07-15
Related Report
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[Presentation] 伝導性γ相酸化ガリウム薄膜の作製2014
Author(s)
松山慶太朗,大島孝仁,吉松公平,大友明
Organizer
2014年第75回応用物理学会秋季学術講演会
Place of Presentation
北海道大学(札幌市・北区)
Year and Date
2014-09-17 – 2014-09-20
Related Report
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[Presentation] Epitaxial growth of wide-band-gap ZnGa2O4 films2014
Author(s)
Takayoshi Oshima, Mifuyu Niwa, Akira Mukai, Tomohito Nagami, Toshihisa Suyama, and Akira Ohtomo
Organizer
The 41th International Symposium on Compound Semiconductor
Place of Presentation
Montpellier. France
Year and Date
2014-05-12 – 2014-05-15
Related Report
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[Presentation] β-Ga2O3 photoeledtrode for water splitting2014
Author(s)
Takayoshi Oshima, Kenichi Kaminaga, Hisanori Mashiko, Akira Mukai, Kohei Sasaki, Takekazu Masui, Akito Kuramata, Shigenobu Yamakoshi, and Akira Ohtomo
Organizer
The 41th International Symposium on Compound Semiconductor
Place of Presentation
Montpellier. France
Year and Date
2014-05-12 – 2014-05-15
Related Report
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