Development of spin-controlled laser with circularly polarized emission

• Project/Area Number: 26709027
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Iba Satoshi 国立研究開発法人産業技術総合研究所, スピントロニクス研究センター, 研究員 (90647059)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥24,700,000 (Direct Cost: ¥19,000,000、Indirect Cost: ¥5,700,000); Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2014: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
• Keywords: スピン / 円偏光 / 半導体量子井戸 / 結晶成長 / 発光 / LED / レーザ / 半導体 / 磁性体

Outline of Final Research Achievements

Spin-controlled lasers, which can emit circularly polarized coherent light, have become a focus of interest. Semiconductor quantum wells (QWs) are crucial building blocks of the spin-lasers. The main purpose of our research project is to improve characteristics of the QWs in order to realize high performance spin-lasers. In this study, we successfully demonstrated great improvement of optical and spin properties in the QWs by using (110)-oriented GaAs substrate through systematic crystal growth experiment. Our findings suggest that the newly developed (110) QWs indeed have greater advantages than the conventional (100)QWs for use in spin-lasers.

Research Products

• [Journal Article] Systematic study of surface morphology, photoluminescence efficiency, and spin-detection sensitivity in (110)-oriented GaAs/AlGaAs quantum wells (2016)
  • Author(s): S. Iba, H. Saito, K. Watanabe, Y. Ohno, and S. Yuasa
  • Journal Title: Jpn. J. Appl. Phys. Volume: 55 Issue: 11 Pages: 113001-113001
  • DOI: 10.7567/jjap.55.113001
  • NAID: 210000147233
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Growth condition dependence of photoluminescence polarization in (100)GaAs/AlGaAs quantum wells at room temperature (2015)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, and Shinji Yuasa
  • Journal Title: Journal of Applied Physics Volume: 118 Issue: 8 Pages: 083901-083901
  • DOI: 10.1063/1.4928325
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Fabrication of Ge-based light-emitting diodes with a ferromagnetic metal/insulator tunnel contact (2015)
  • Author(s): S. Iba, H. Saito, S. Yuasa, Y. Yasutake, and S. Fukatsu
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DM02-04DM02
  • DOI: 10.7567/jjap.54.04dm02
  • NAID: 210000145074
  • Peer Reviewed
• [Presentation] 円偏光で発振する半導体スピンレーザの開発 (2017)
  • Author(s): 揖場 聡，齋藤秀和, 大野裕三，湯浅新治
  • Organizer: ATIスピントロニクス研究会
  • Place of Presentation: 東京
  • Invited
• [Presentation] Temperature dependence of spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells (2016)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, Shinji Yuasa
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学(東京都)
  • Year and Date: 2016-03-19
• [Presentation] Impacts of growth condition on photoluminescence polarization in (100)-oriented GaAs quantum wells at room temperature (2016)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, Shinji Yuasa
  • Organizer: 13th Joint MMM-Intermag Conference
  • Place of Presentation: San Diego (USA)
  • Year and Date: 2016-01-11
  • Int'l Joint Research
• [Presentation] Fabrication of (110)-oriented GaAs/AlGaAs quantum wells for spin-controlled light sources (2016)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, Shinji Yuasa
  • Organizer: PASPS９
  • Place of Presentation: 神戸
  • Int'l Joint Research
• [Presentation] Development of (110) GaAs quantum wells for emission layers of spin-controlled lasers (2016)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, Shinji Yuasa
  • Organizer: International workshop on nano-spin conversion science & quantum spin dynamics
  • Place of Presentation: 東京
  • Int'l Joint Research
• [Presentation] Growth condition dependence of carrier and spin lifetimes in GaAs/AlGaAs quantum wells at room temperature (2015)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, Shinji Yuasa
  • Organizer: 第20回 半導体におけるスピン工学の基礎と応用 PASPS-20
  • Place of Presentation: 東北大学(宮城県)
  • Year and Date: 2015-12-03
• [Presentation] スピン面発光レーザの開発へ向けた(110)GaAs/AlGaAs量子井戸の高速MBE成長 (2015)
  • Author(s): 揖場 聡，齋藤秀和, 渡辺 健, 大野裕三，湯浅新治
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] Growth condition dependence of carrier and spin lifetimes in GaAs-based quantum wells (2015)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, Shinji Yuasa
  • Organizer: SPIE Optics + Photonics
  • Place of Presentation: San Diego (USA)
  • Year and Date: 2015-08-09
  • Int'l Joint Research / Invited
• [Presentation] Effect of growth conditions on carrier and spin lifetimes in (001) GaAs/AlGaAs quantum wells (2015)
  • Author(s): Satoshi Iba, Hidekazu Saito, Ken Watanabe, Yuzo Ohno, and Shinji Yuasa
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Fabrication of Ge-based light-emitting diodes with a ferromagnetic electrode (2014)
  • Author(s): Satoshi Iba, Hidekazu Saito, Shinji Yuasa, Yuhsuke Yasutake, and Susumu Fukatsu
  • Organizer: 2014 International Conference on Solid State Devices and Materials (SSDM 2014)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2014-09-08 – 2014-09-11
• [Patent(Industrial Property Rights)] 半導体発光素子及びその製造方法 (2016)
  • Inventor(s): 揖場聡、齋藤秀和
  • Industrial Property Rights Holder: 揖場聡、齋藤秀和
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-013696
  • Filing Date: 2016-07-11