Development of spin-controlled laser with circularly polarized emission
| Project/Area Number |
26709027
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Iba Satoshi 国立研究開発法人産業技術総合研究所, スピントロニクス研究センター, 研究員 (90647059)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥24,700,000 (Direct Cost: ¥19,000,000、Indirect Cost: ¥5,700,000)
Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2014: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
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| Keywords | スピン / 円偏光 / 半導体量子井戸 / 結晶成長 / 発光 / LED / レーザ / 半導体 / 磁性体 |
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| Outline of Final Research Achievements |
Spin-controlled lasers, which can emit circularly polarized coherent light, have become a focus of interest. Semiconductor quantum wells (QWs) are crucial building blocks of the spin-lasers. The main purpose of our research project is to improve characteristics of the QWs in order to realize high performance spin-lasers. In this study, we successfully demonstrated great improvement of optical and spin properties in the QWs by using (110)-oriented GaAs substrate through systematic crystal growth experiment. Our findings suggest that the newly developed (110) QWs indeed have greater advantages than the conventional (100)QWs for use in spin-lasers.
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Report
(4 results)
Research Products
(14 results)
