| Budget Amount *help |
¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2014: ¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000)
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| Outline of Final Research Achievements |
Amorphous (a-) silicon (Si) is an important semiconductor used for thin film transistors and solar panels. In 1975, Spear et al. demonstrated that thin films of a-Si deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) from silane (SiH4) are useful for semiconductor devices, which constitutes a breakthrough for a-Si applications1. On the other hand, it has long been challenged to obtain a “bulk” a-Si from liquid (l-) Si. However, all attempts have failed so far. In this research project, we tried to produce bulk a-Si directly from supercooled l-Si. Combining an electrostatic levitator with a quenching system, we quenched supercooled l-Si at 300 K below the melting temperature to obtain bulk a-Si.
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