| Project/Area Number |
26790007
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Elborg Martin 国立研究開発法人物質・材料研究機構, 若手国際研究センター, ICYS研究員 (60724630)
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| Research Collaborator |
Noda Takeshi
Mano Takaaki
Sakuma Yoshiki
Bollmann Joachim
Venter Andre
Venter Danielle
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 太陽電池 / 量子構造 / MBE, エピタキシャル / GaNAs / 中間バンド太陽電池 / 2段階光子吸収 / 開路電圧 / MBE / エピタキシャル / MBE、エピタキシャル |
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| Outline of Final Research Achievements |
We study dilute-N GaAs quantum wells (QWs) for application in Intermediate Band Solar Cells (IBSCs) with proposed conversion efficiencies exceeding the Schokley-Queisser limit of single-junction solar cells. We investigate the optical properties of GaNAs QWs exhibiting both confined quantum states as well as optically active N-induced defect states. The energy levels are characterized by capacitance spectroscopic techniques (DLTS, Admittance, CV measurement). We optimize the epitaxial growth to achieve close-to-ideal transition energies in GaNAs/AlGaAs QWs. Co-doping with Sb leads to improved optical quality. Using a strain-free GaAs/AlGaAs quantum dot model system, we demonstrate clear two-step photocurrent generation at room temperature, the key IBSC operating principle. We realize a recovery of open-circuit voltage in GaNAs/AlGaAs QW embedded solar cells for deeply confined structures. Our results represent a major advancement in the pursuit to realize the IBSC concept.
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