Generation of spin current at ferromagnetic semiconductor interface and manipulation of physical property due to spin current
| Project/Area Number |
26790037
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials
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| Research Institution | Keio University (2015)
Tohoku University (2014) |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | スピントロニクス / スピン流 / スピンホール効果 / スピンポンピング / スピンミキシングコンダクタンス / 強磁性半導体 / スピン流生成 |
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| Outline of Final Research Achievements |
We investigate generation of spin current at a metal/ferromagnet semiconductor interface. By conducting angular-dependent spin pumping measurements, we successfully separate the voltage induced by the inverse spin Hall effect from the galvanomagnetic effect, which indicates the generation of spin current at metal/ferromagnetic semiconductor interface.
We also studied the spin Hall effect by means of the harmonic Hall voltage measurements. By precisely measuring the spin current generated by the spin Hall effect, we find that the spin Hall effect in Pt exhibits small dependence on temperature. We also find that the spin current driven by the spin accumulation can be detected by the harmonic Hall voltage measurement. Our findings establish an effective approach to precisely measure the spin Hall effect, which will play an crucial role in the fundamental research on spintronics.
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Report
(3 results)
Research Products
(16 results)
