Research for improvement in InN crystalline quality via control of the gas phase reactions
Project/Area Number |
26790043
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Crystal engineering
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Research Institution | Tokyo University of Agriculture and Technology |
Principal Investigator |
Thieu Quang Tu 東京農工大学, 工学(系)研究科(研究院), 助教 (30725742)
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Project Period (FY) |
2014-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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Keywords | 気相反応 / 窒化インジウム / MOVPE / 電気伝導特性 |
Outline of Final Research Achievements |
The MOVPE growth of InN was investigated by using the combination of 2 nitrogen sources, NH3 and DMHy. DMHy is expected for growth of III-nirides at low temperatures due to its high thermal decomposition efficiency, therefore would be useful in growth of InN which cannot withstand high temperature. However, the use of DMHy only would lead to a strong parasitic reaction with the precursor of indium, TMIn. NH3 which has a supposedly weaker parasitic reaction with TMIn, was used together with DMHy in a hope that TMIn will react first with NH3 (due to the gas flow design) to form an adduct and therefore keep DMHy away from the unexpected reactions in the gas phase. However, this scheme lead only to InN crystals with no superior quality than the ones grown by using NH3 only (typical electron concentration 10^19 cm-3, mobility 200 cm2/V.s). A large amount of In droplets on the surfaces implied an etching effect possibly due to H2 which is from the thermal decomposition of DMHy and NH3.
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Report
(3 results)
Research Products
(18 results)
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[Journal Article] Influence of high-temperature processing on the surface properties of bulk AlN substrates2016
Author(s)
S. Tojo, R. Yamamoto, R. Tanaka, Q.-T. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo, A. Koukitu, B. Monemar, Z. Sitar, Y. Kumagai
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Journal Title
Journal of Crystal Growth
Volume: 446
Pages: 33-38
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
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[Journal Article] Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy2016
Author(s)
M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, S. Yamakoshi
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Journal Title
Applied Physics Letters
Volume: 108
Issue: 13
Pages: 133503-133506
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Anisotropy, phonon modes, and free charge carrier parameters in monoclinic beta-gallium oxide single crystals2016
Author(s)
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schoche, V. Darakc hieva, E. Janzen, B. Monemar, D. Gogova, Q.T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
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Journal Title
Physical Review B
Volume: 93
Issue: 12
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Presentation] Optical Properties of Doped and Intrinsic β-Ga2O32015
Author(s)
I. G. Ivanov, K. Goto, K. Nomura, H. Murakami, Q.T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, M. Higashiwaki, A.Koukitu, S. Yamakoshi, E. Janzén, and B. Monemar
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
桂キャンパス (京都市西京区京都大学)
Year and Date
2015-11-06
Related Report
Int'l Joint Research
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[Presentation] Temperature-Dependent Device Characteristics of HVPE-GrownGa2O3 Schottky Barrier Diodes2015
Author(s)
K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
桂キャンパス (京都市西京区京都大学)
Year and Date
2015-11-05
Related Report
Int'l Joint Research
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[Presentation] EPR Studies of Defects in β-Ga2O32015
Author(s)
N. T. Son, K. Goto, K. Nomura, H. Murakami, Q. T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, M. Higashiwaki, AKoukitu, S. Yamakoshi, B. Monemar, and E. Janzén
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
桂キャンパス (京都市西京区京都大学)
Year and Date
2015-11-05
Related Report
Int'l Joint Research
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[Presentation] Comparative Study on Thermal Stability of Group-III Oxides2015
Author(s)
R. Togashi, K. Nomura, C. Eguchi, Y. Kisanuki, K. Goto,Q. T. Thieu, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
桂キャンパス (京都市西京区京都大学)
Year and Date
2015-11-04
Related Report
Int'l Joint Research
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[Presentation] Anisotropy, Phonon Modes and Band-to-Band Transitions inSingle-Crystal Monoclinic Beta-Ga2O3 Determined by THz to VUV Generalized Ellipsometry2015
Author(s)
M. Schubert, R. Korlacki, S. Schoeche, V. Darakchieva,B. Monemar, K. Goto, K. Nomura, H. Murakami, Q.T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, M. Higashiwaki, A.Koukitu, S. Yamakoshi, E. Janzén, D. Gogova6, M.Schmidbauer, Z. Galazka
Organizer
The 1st International Workshop on Gallium Oxide and Related Materials
Place of Presentation
桂キャンパス (京都市西京区京都大学)
Year and Date
2015-11-04
Related Report
Int'l Joint Research
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[Presentation] Progress in Research and Development on Gallium Oxide Power Devices2015
Author(s)
Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura, Man Hoi Wong, Ken Goto,Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu, Akito Kuramata, and Shigenobu Yamakoshi
Organizer
42nd International Symposium on Compound Semiconductors
Place of Presentation
University of California Santa Barbara (Santa Barbara, California, USA)
Year and Date
2015-06-28 – 2015-07-02
Related Report
Invited
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[Presentation] Thermal stability of group-III oxides in flows of H2 and N22015
Author(s)
Y. Kisanuki, C. Eguchi, K. Nomura, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, B. Monemar and A. Koukitu
Organizer
Conference on LED and Its Industrial Application ’15 (LEDIA ’15),
Place of Presentation
Pacifico Yokohama(神奈川県横浜市)
Year and Date
2015-04-23
Related Report
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