| Project/Area Number |
26790043
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
Thieu Quang Tu 東京農工大学, 工学(系)研究科(研究院), 助教 (30725742)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Keywords | 気相反応 / 窒化インジウム / MOVPE / 電気伝導特性 |
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| Outline of Final Research Achievements |
The MOVPE growth of InN was investigated by using the combination of 2 nitrogen sources, NH3 and DMHy. DMHy is expected for growth of III-nirides at low temperatures due to its high thermal decomposition efficiency, therefore would be useful in growth of InN which cannot withstand high temperature. However, the use of DMHy only would lead to a strong parasitic reaction with the precursor of indium, TMIn. NH3 which has a supposedly weaker parasitic reaction with TMIn, was used together with DMHy in a hope that TMIn will react first with NH3 (due to the gas flow design) to form an adduct and therefore keep DMHy away from the unexpected reactions in the gas phase. However, this scheme lead only to InN crystals with no superior quality than the ones grown by using NH3 only (typical electron concentration 10＾19 cm-3, mobility 200 cm2/V.s). A large amount of In droplets on the surfaces implied an etching effect possibly due to H2 which is from the thermal decomposition of DMHy and NH3.
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