| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Outline of Final Research Achievements |
We developed high-quality GaN wafers for efficient white LEDs. From systematic investigations for various semipolar planes of GaN, it was revealed that {20-2-1} plane indicated high growth rate (efficient utilization efficiency of Ga source) and low dislocation density. In addition, mechanism of wafer bow was clarified from both experimental and theoretical aspects. Based on obtained results, a new growth method to suppress the wafer bow is also developed. For the purpose of reduction of crystalline defects, the combination of facet growth and surface flattening were effective. At the final stage of the project, we achieved the overall dislocation density of 10E5 cm-2.
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