Development of high quality semipolar-GaN substrates by HVPE with improved source-utilization efficiency
| Project/Area Number |
26790044
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
YAMANE KEISUKE 豊橋技術科学大学, 工学(系)研究科(研究院), 助教 (80610815)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | ＧａＮ基板 / 結晶欠陥 / 非極性面 / 反り / GaN基板 / 結晶欠陥抑制 / ハイドライド気相成長 / 転位 |
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| Outline of Final Research Achievements |
We developed high-quality GaN wafers for efficient white LEDs. From systematic investigations for various semipolar planes of GaN, it was revealed that {20-2-1} plane indicated high growth rate (efficient utilization efficiency of Ga source) and low dislocation density. In addition, mechanism of wafer bow was clarified from both experimental and theoretical aspects. Based on obtained results, a new growth method to suppress the wafer bow is also developed. For the purpose of reduction of crystalline defects, the combination of facet growth and surface flattening were effective. At the final stage of the project, we achieved the overall dislocation density of 10E5 cm-2.
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Report
(4 results)
Research Products
(26 results)
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[Journal Article] Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates2016
Author(s)
T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
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Journal Title
Japanese Journal of Applied Phyisics
Volume: 55
Related Report
Peer Reviewed
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[Presentation] HVPE-grown GaN substrate with overall low dislocation density and relation between lattice bowing and defects2017
Author(s)
N. Okada, K. Yamane, T. Matsubara, S. Goubara, H. Ihara, K. Yukizane, T. Ezaki, S. Fujimoto, R. Inomoto, K. Tadatomo
Organizer
12th International Conference on Nitride Semiconductores
Place of Presentation
Strasbourg, France
Year and Date
2017-07-24
Related Report
Int'l Joint Research / Invited
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[Presentation] Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates2015
Author(s)
T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
Organizer
The 6th International Symposium on Growth of III-Nitrides
Place of Presentation
アクトシティ浜松、 静岡県浜松市
Year and Date
2015-11-08
Related Report
Int'l Joint Research
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[Presentation] X線マイクロ回折法による半極性面(20-21)GaN厚膜の欠陥分布評価2015
Author(s)
内山星郎, 竹内正太郎, 荒内琢士, 橋本健宏, 山根啓輔, 岡田成仁, 今井康彦, 木村滋, 只友一行, 酒井朗
Organizer
第76回応用物理学会秋季学術講演会
Place of Presentation
名古屋国際会議場, 愛知県名古屋市
Year and Date
2015-09-13
Related Report
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[Presentation] 周期溝加工(22-43)サファイア基板上半極性面(20-21)GaNの微視的結晶構造解析2014
Author(s)
[63]荒内琢士, 竹内正太郎, 橋本健宏, 中村芳明, 今井康彦, 山根啓輔, 岡田成仁, 木村滋, 只友一行, 酒井朗
Organizer
第75回応用物理学会秋季学術講演会
Place of Presentation
北海道大学, 北海道
Year and Date
2014-09-17 – 2014-09-20
Related Report
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