| Project/Area Number |
26790045
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Kwansei Gakuin University |
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Principal Investigator |
YOSHIDA MASAHIRO 関西学院大学, 理工学研究科, 博士研究員 (80634500)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 表面X線回折 / グラフェン / シリコンカーバイド / その場観察 / 放射光X線 / 結晶成長 |
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| Outline of Final Research Achievements |
I have established the in-situ observation method by synchrotron surface x-ray diffraction in order to investigate surface/interface structures during the grphene growth through the thermal decomposition of silicon carbide(SiC). Firstly, I identified that Bragg peaks caused by SiC and/or graphene and a superstructure reflection caused by buffer layer lie at geometric positions. Subsequently, I performed the in-situ observation of the superstrucure reflection combining the custom-designed furnace, multi-axes diffractometer and two-dimensional detector PILATUS. I considered that obtained temperature changes of the peak profile were explained based on the growth model widely supported. As a result, I have successfully proved the practicality of the established in-situ method.
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