In-situ observation of the graphene through the thermal decomposition of silicon carbide by shcrotron surface x-ray difraction

• Project/Area Number: 26790045
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Kwansei Gakuin University
• Principal Investigator: YOSHIDA MASAHIRO 関西学院大学, 理工学研究科, 博士研究員 (80634500)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 表面X線回折 / グラフェン / シリコンカーバイド / その場観察 / 放射光X線 / 結晶成長

Outline of Final Research Achievements

I have established the in-situ observation method by synchrotron surface x-ray diffraction in order to investigate surface/interface structures during the grphene growth through the thermal decomposition of silicon carbide(SiC). Firstly, I identified that Bragg peaks caused by SiC and/or graphene and a superstructure reflection caused by buffer layer lie at geometric positions. Subsequently, I performed the in-situ observation of the superstrucure reflection combining the custom-designed furnace, multi-axes diffractometer and two-dimensional detector PILATUS. I considered that obtained temperature changes of the peak profile were explained based on the growth model widely supported. As a result, I have successfully proved the practicality of the established in-situ method.

Research Products

• [Journal Article] Development of the compact furnace for the in-situ observation under ultra-high temperature by synchrotron x-ray surface diffraction (2016)
  • Author(s): M. Yoshida, Y. Kutsuma, D. Dohjima, K. Ohwadad,T.Inami, N. Ohtani, T. Kaneko and J. Mizuki
  • Journal Title: Materials Science Forum Volume: 858 Pages: 505-508
  • DOI: 10.4028/www.scientific.net/msf.858.505
  • Peer Reviewed
• [Presentation] In-situ observation of the SiC surface during thermal decomposition by synchrotron x-ray surface diffraction (2015)
  • Author(s): Masahiro Yoshida, Yasunori Kutsuma, Daichi Dohjima, Kenji Ohwada, Toshiya Inami, Noboru Ohtani, Tadaaki Kaneko and Jun’ichiro Mizuki
  • Organizer: 16th Internaitonal Conference of Silicon Carbide and Related Materials
  • Place of Presentation: Giardini Naxos, Italy
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] 放射光X線回折によるSiC熱分解表面のその場観察法の開発 (2015)
  • Author(s): 吉田雅洋, 河邉文哉, 久津間保徳, 堂島大地, 重政英史, 大和田謙二, 稲見俊哉, 玉井尚登, 大谷昇, 金子忠昭, 水木純一郎
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学 (神奈川県)
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Development of in-situ observation method of the graphene growth by sychrotron x-ray surface diffraction (2014)
  • Author(s): M.Yoshida, F. Kawabe, Y. Kutsuma, D. Dohjima, H. Shigemasa, K. Ohwada, N. Tamai, N. Ohtani, T. Kaneko and J. Mizuki
  • Organizer: European Conference on Silicon Carbide and Related Materials 2014
  • Place of Presentation: グルノーブル(フランス)
  • Year and Date: 2014-09-21 – 2014-09-25