The control technology and influence of the structural properties of carrier transport for impurity-doped ZnO films
| Project/Area Number |
26790050
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
Nomoto Junichi 高知工科大学, 公私立大学の部局等, 助教 (30711288)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | キャリア輸送機構 / 透明導電酸化物 / 酸化亜鉛 / 配向制御 / 透明導電膜 / マグネトロンスパッタリング / イオンプレーティング |
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| Outline of Final Research Achievements |
In this study, firstly, we clarify the correlation between orientation evolution and carrier transport of Al-doped ZnO (AZO) films deposited on glass substrates by direct current (DC) and radio frequency (RF) magnetron sputtering (MS) techniques. We found that DC-MS is possible to realize a high carrier transport by increasing the degree of (0001) orientation. As a solution, we deposited 10-nm-thick AZO films with well-defined (0001) orientation on glass substrates by RF-MS to successively deposit AZO films by DC-MS. Then, we achieved a near complete absence of the (10-11) reflection in AZO films. As a result, we realized the control of the carrier transport properties in polycrystalline thin film.
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Report
(3 results)
Research Products
(17 results)
