| Project/Area Number |
26790051
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kogakuin University |
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Principal Investigator |
AIKAWA SHINYA 工学院大学, 総合研究所, 助教 (40637899)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 薄膜トランジスタ / 酸化物半導体 / 表面・界面物性 / 半導体物性 / ディスプレイ応用 / 電子デバイス / ディスプレイ |
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| Outline of Final Research Achievements |
Thin film transistors (TFTs) using an amorphous oxide semiconductors show superior electrical properties by annealing in air under appropriate conditions (time and temperature). However, the annealing effect to improvement of the TFT properties has been still unclear. In this study, we investigated the annealing time dependence of the film resistivity and found that there are two effects by the heat treatment: One is desorption of excess oxygen which is dominated by a short annealing time, another is oxidation. In contrast to the desorption, this is occurred by a long time scale. Furthermore, the excess oxygen can easily diffuse out of the film without annealing in a vacuum storage conditions. Consequently, we conclude that the In-Si-O with 10 wt.% of SiO2 in its composition is useful for TFT material because the In-Si-O can form strong oxygen bindings even when low oxygen partial pressure conditions were used.
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