Gate-induced redox reaction in an iron oxide based electric double layer transistor
| Project/Area Number |
26790052
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagoya University |
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Principal Investigator |
Hatano Takafumi 名古屋大学, 工学(系)研究科(研究院), 助教 (00590069)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 薄膜・表面界面物性 / 鉄酸化物 / 電界効果 / 表面・界面物性 / 酸化物エレクトロニクス |
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| Outline of Final Research Achievements |
By means of the special treatments at high temperatures such as annealing in Ozone ambient, several oxidized states are realized in an iron oxide of SrFeOx. Our goal is to realize this class of redox reaction without any special treatment. For this purpose, we adopt an ionic-liquid gating technique to SrFeO2.5 and realize the gate-induced redox reaction in a field effect transistor configuration at room temperatures.
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Report
(3 results)
Research Products
(4 results)
