| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Outline of Final Research Achievements |
By means of the special treatments at high temperatures such as annealing in Ozone ambient, several oxidized states are realized in an iron oxide of SrFeOx. Our goal is to realize this class of redox reaction without any special treatment. For this purpose, we adopt an ionic-liquid gating technique to SrFeO2.5 and realize the gate-induced redox reaction in a field effect transistor configuration at room temperatures.
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