Development of Heteroepitaxial Diamond Wafers by Controlled Buffer Layers
| Project/Area Number |
26820110
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | ダイヤモンド / ヘテロエピタキシャル成長 / 核形成法 / 核形成モニタリング |
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| Outline of Final Research Achievements |
Nucleation and selection technologies of epitaxial diamonds were developed toward fabricating large-area hetero-diamond wafers. The diamond nucleation was performed using a molecular source and bias-enhancement methods. It was revealed that impurities between diamond and a buffer layer caused the formation of non-epitaxial diamonds. The impurities can be suppressed by a high amount of atomic hydrogen generated in a high power density plasma, leading to improvement of the orientation of (100) diamonds. On a (111) face, epitaxial diamonds were obtained with a combination of short-time bias treatment and oxygen addition. Finally, highly-oriented diamond films were achieved on both the (100) and (111) crystal faces.
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Report
(4 results)
Research Products
(29 results)
