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Fabrication of highly efficient luminescence of rare-earth doped nitride semiconductors by control of local structures around rare-earth ions

Research Project

Project/Area Number 26820113
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

KOIZUMI ATSUSHI  大阪大学, 工学(系)研究科(研究院), 助教 (30418735)

Project Period (FY) 2014-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywords希土類添加半導体 / 窒化物半導体 / ユウロピウム / 有機金属気相エピタキシャル法 / 赤色発光ダイオード / 半導体物性 / DLTS / 共添加
Outline of Final Research Achievements

The effects of co-doping on local structures around Eu ions in Eu-doped GaN were investigated to obtain highly efficient excitation of the Eu ions for the application of red light emitting devices using nitride semiconductors. In Eu,Zn,O codoped GaN, a new Eu luminescent center was obtained, while the luminescent center was not observed in Eu-doped GaN and Eu,Zn-codoped GaN. The growth temperature and GaN polarity dependence of the doping of Eu and luminescence properties were investigated. Laplace deep-level transient spectroscopy spectra implied the formation of Eu, N vacancy, and Ga vacancy related defect complex in Eu-doped GaN.

Report

(3 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • Research Products

    (50 results)

All 2016 2015 2014 Other

All Journal Article (7 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 7 results,  Open Access: 2 results,  Acknowledgement Compliant: 4 results) Presentation (41 results) (of which Int'l Joint Research: 10 results,  Invited: 7 results) Book (1 results) Remarks (1 results)

  • [Journal Article] Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications2016

    • Author(s)
      B. Mitchell, D. Timmerman, J. Poplawsky, W. Zhu, D. Lee, R. Wakamatsu, J. Takatsu, M. Matsuda, W. Guo, K. Lorenz, E. Alves, A. Koizumi, V. Dierolf, and Y. Fujiwara
    • Journal Title

      Scientific Reports

      Volume: 6 Issue: 1

    • DOI

      10.1038/srep18808

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Study of defects in GaN in situ doped with Eu3+ ion grown by OMVPE2016

    • Author(s)
      J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak
    • Journal Title

      Journal of Electronic Materials

      Volume: 45 Issue: 4 Pages: 2001-2007

    • DOI

      10.1007/s11664-016-4337-4

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties2015

    • Author(s)
      A. Koizumi, K. Kawabata, D. Lee, A. Nishikawa, Y. Terai, H. Ofuchi, T. Honma, and Y. Fujiwara
    • Journal Title

      Optical Materials

      Volume: 41 Pages: 75-79

    • DOI

      10.1016/j.optmat.2014.11.005

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes2015

    • Author(s)
      Masashi Ishii, Atsushi Koizumi, and Yasufumi Fujiwara
    • Journal Title

      Journal of Applied Physics

      Volume: 117 Issue: 15 Pages: 1553071-7

    • DOI

      10.1063/1.4918662

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] The role of donor-acceptor pairs in the excitation mechanism of Eu-ions in GaN:Eu epitaxial layers2014

    • Author(s)
      B. Mitchell, J. Poplawsky, D. Lee, A. Koizumi, Y. Fujiwara, and V. Dierolf
    • Journal Title

      Journal of Applied Physics

      Volume: 115 Issue: 20

    • DOI

      10.1063/1.4879253

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges2014

    • Author(s)
      M. Ishii, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 17

    • DOI

      10.1063/1.4900840

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] 希土類添加GaNとLED応用2014

    • Author(s)
      藤原康文, 小泉淳
    • Journal Title

      レーザー研究

      Volume: 42 Pages: 211-215

    • NAID

      130007897579

    • Related Report
      2014 Research-status Report
    • Peer Reviewed
  • [Presentation] Current understanding of Eu emission centers in Eu-doped GaN grown by organometallic vapor-phase epitaxy2016

    • Author(s)
      A. Koizumi and Y. Fujiwara
    • Organizer
      9th Pacific Rim International Conference on Advanced Materials and Processing
    • Place of Presentation
      国立京都国際会館(京都府・京都市)
    • Year and Date
      2016-08-01
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2016

    • Author(s)
      Y. Fujiwara, T. Nunokawa, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
    • Organizer
      Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials
    • Place of Presentation
      大阪大学(大阪府・吹田市)
    • Year and Date
      2016-03-25
    • Related Report
      2015 Annual Research Report
  • [Presentation] Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy2016

    • Author(s)
      W. Zhu, M. Ishii, A. Koizumi, Y. Fujiwara
    • Organizer
      第63回 応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Eu添加GaNにおける2価Euイオンの出現とその制御2016

    • Author(s)
      布川拓未, 小泉淳, 松田将明, 朱婉新, 藤原康文
    • Organizer
      第63回 応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
  • [Presentation] Eu添加GaNにおけるEuイオンの価数制御2016

    • Author(s)
      布川拓未, 小泉淳, 松田将明, 朱婉新, 藤原康文
    • Organizer
      平成27年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会
    • Place of Presentation
      福井大学(福井県・福井市)
    • Year and Date
      2016-01-30
    • Related Report
      2015 Annual Research Report
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
    • Organizer
      2nd International Workshop on Luminescent Materials 2015
    • Place of Presentation
      京都大学(京都府・京都市)
    • Year and Date
      2015-12-12
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Luminescence properties of Eu-doped InxGa1-xN and their application to the detection of In segregation2015

    • Author(s)
      J. Takatsu, A. Koizumi, S. Yamanaka, M. Matsuda, T. Kojima, and Y. Fujiwara
    • Organizer
      19th SANKEN International, The 14th SANKEN Nanotechnology Symposium, 3rd KANSAI Nanoscience and Nanotechnology, 11th Handai Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      大阪大学(大阪府・吹田市)
    • Year and Date
      2015-12-07
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Separation of Eu-related trap levels in Eu-doped GaN by Laplace deep level transient spectroscopy2015

    • Author(s)
      T. Shigemune, A. Koizumi, and Y. Fujiwara
    • Organizer
      19th SANKEN International, The 14th SANKEN Nanotechnology Symposium, 3rd KANSAI Nanoscience and Nanotechnology, 11th Handai Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      大阪大学(大阪府・吹田市)
    • Year and Date
      2015-12-07
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] プラスDLTS測定によるEu添加GaNにおけるEu関連トラップ準位の分離2015

    • Author(s)
      重宗翼, 小泉淳, 藤原康文
    • Organizer
      平成27年度第3回半導体エレクトロニクス部門委員会第2回研究会
    • Place of Presentation
      京都大学桂キャンパス(京都府・京都市)
    • Year and Date
      2015-11-21
    • Related Report
      2015 Annual Research Report
  • [Presentation] Eu添加InxGa1-xNにおけるEu発光特性評価とその応用2015

    • Author(s)
      高津潤一, 小泉淳, 山中柊平, 松田将明, 児島貴徳, 藤原康文
    • Organizer
      平成27年度第3回半導体エレクトロニクス部門委員会第2回研究会
    • Place of Presentation
      京都大学桂キャンパス(京都府・京都市)
    • Year and Date
      2015-11-21
    • Related Report
      2015 Annual Research Report
  • [Presentation] Electrical properties of trapping level related to the excitation of Eu luminescent center in Eu-doped GaN investigated by thermally stimulated current2015

    • Author(s)
      A. Koizumi, Y. Maruyama, K. Okada, T. Shigemune, T. Kojima, and Y. Fujiwara
    • Organizer
      6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      アクトシティ浜松(静岡県・浜松市)
    • Year and Date
      2015-11-08
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] OMVPE 法によるEu 添加InxGa1-xNの作製とEu発光特性評価2015

    • Author(s)
      高津潤一, 山中柊平, 松田将明, 小泉淳, 児島貴徳, 藤原康文
    • Organizer
      第76回 応用物理学会春季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Characterization of GaN/Eu-doped GaN multiple-nanolayer structures grown by low-temperature organometallic vapor phase epitaxy2015

    • Author(s)
      W. Zhu, D. Timmerman, B. Mitchell, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara
    • Organizer
      11th International Conference on Nitride Semiconductors
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Valence control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2015

    • Author(s)
      Y. Fujiwara, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
    • Organizer
      SPIE Nanoscience + Engineering
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2015-08-09
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Luminescence properties of Eu-doped InxGa1-xN grown by organometallic vapor-phase epitaxy2015

    • Author(s)
      A. Koizumi, S. Yamanaka, M. Matsuda, and Y. Fujiwara
    • Organizer
      34nd Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県・守山市)
    • Year and Date
      2015-07-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer2015

    • Author(s)
      Y. Fujiwara, T. Kojima, and A. Koizumi
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices - 2015 German-Japanese-Spanish Joint Workshop -
    • Place of Presentation
      芝蘭会館(京都府・京都市)
    • Year and Date
      2015-07-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] GaN/Eu添加GaNナノ構造によるEu発光効率の著しい増大2015

    • Author(s)
      朱婉新, B. Mitchell, D. Timmerman, 小泉淳, T. Gregorkiewicz, 藤原康文
    • Organizer
      平成27年度第2回半導体エレクトロニクス部門委員会第1回研究会
    • Place of Presentation
      大阪工業大学うめきたナレッジセンター(大阪府・大阪市)
    • Year and Date
      2015-07-11
    • Related Report
      2015 Annual Research Report
  • [Presentation] Present understanding of Eu luminescent centers in Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, A. Koizumi, and V. Dierolf
    • Organizer
      Collaborative Conference on 3D and Materials Research 2015
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2015-06-15
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Energy migration between Eu luminescent sites in Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, D. Timmerman, and A. Koizumi
    • Organizer
      7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2015-05-17
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of Energy Transfer Process in Eu-Doped GaN by Two-Wavelength Excited Photoluminescence2015

    • Author(s)
      Kohei Okada, Ryuta Wakamatsu, Dolf Timmerman, Takanori Kojima, Atsushi Koizumi, and Yasufumi Fujiwara
    • Organizer
      7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya University, Nagoya, Japan
    • Year and Date
      2015-03-26 – 2015-03-31
    • Related Report
      2014 Research-status Report
  • [Presentation] Formation of a New Eu Luminescent Center by Zn,O-Codoping in Eu-Doped GaN2015

    • Author(s)
      Masaaki Matsuda, Atsushi Koizumi, Takanori Kojima, Dolf Timmerman, Yasufumi Fujiwara
    • Organizer
      7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya University, Nagoya, Japan
    • Year and Date
      2015-03-26 – 2015-03-31
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu,O共添加GaNにおけるトラップ準位のDLTS評価2015

    • Author(s)
      重宗翼, 小泉淳, 児島貴徳, 藤原康文
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Research-status Report
  • [Presentation] GaN:Eu赤色LEDの発光効率改善法:パルス駆動による注入電荷共振2015

    • Author(s)
      石井真史, 小泉淳, 藤原康文
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu,O 共添加GaN におけるDLTS 法を用いたトラップ準位の測定2015

    • Author(s)
      重宗翼、小泉淳、児島貴徳、藤原康文
    • Organizer
      平成26年度第4回半導体エレクトロニクス部門委員会第1回講演会
    • Place of Presentation
      広島大学学士会館レセプションホール(東広島市)
    • Year and Date
      2015-01-24
    • Related Report
      2014 Research-status Report
  • [Presentation] 希土類元素の精密ドーピングによる半導体光機能性の制御2014

    • Author(s)
      藤原康文、Dolf Timmerman、児島貴徳、小泉淳
    • Organizer
      第25回光物性研究会
    • Place of Presentation
      神戸大学百年記念会館(神戸市)
    • Year and Date
      2014-12-12 – 2014-12-13
    • Related Report
      2014 Research-status Report
  • [Presentation] Temperature dependence of photoconductivity in Eu-doped GaN2014

    • Author(s)
      A. Koizumi, K. Okada, T. Shigemune, T. Kojima, and Y. Fujiwara
    • Organizer
      2nd KANSAI Nanoscience and Nanotechnology
    • Place of Presentation
      The Congres Convention Center, Osaka, Japan
    • Year and Date
      2014-12-10 – 2014-12-11
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu site-dependent energy transfer in red light emitter of Eu-doped GaN2014

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, D. Lee, B. Mitchell, A. Koizumi, and V. Dierolf
    • Organizer
      2014 MRS Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Related Report
      2014 Research-status Report
  • [Presentation] Low-temperature growth of Eu-doped GaN by organometallic vapor phase epitaxy2014

    • Author(s)
      W. Zhu, D. Timmerman, B. Mitchell, A. Koizumi, and Y. Fujiwara
    • Organizer
      2014 MRS Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Related Report
      2014 Research-status Report
  • [Presentation] Europium-doped gallium nitride and its application to environmentally-friendly red light-emitters2014

    • Author(s)
      Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
    • Organizer
      1st International Symposium on Interactive Materials Science Cadet Program
    • Place of Presentation
      Hotel Hankyu Expo Park, Osaka, Japan
    • Year and Date
      2014-11-16 – 2014-11-19
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Effects of oxygen codoping on Eu luminescence properties in Eu-doped GaN2014

    • Author(s)
      J. Takatsu, M. Matsuda, T. Kojima, A. Koizumi, and Y. Fujiwara
    • Organizer
      1st International Symposium on Interactive Materials Science Cadet Program
    • Place of Presentation
      Hotel Hankyu Expo Park, Osaka, Japan
    • Year and Date
      2014-11-16 – 2014-11-19
    • Related Report
      2014 Research-status Report
  • [Presentation] Formation of efficient Eu luminescent centers in Eu-doped GaN by low-temperature organometallic vapor phase epitaxy2014

    • Author(s)
      W. Zhu, D. Timmerman, B. Mitchell, A. Koizumi, and Y. Fujiwara
    • Organizer
      1st International Symposium on Interactive Materials Science Cadet Program
    • Place of Presentation
      Hotel Hankyu Expo Park, Osaka, Japan
    • Year and Date
      2014-11-16 – 2014-11-19
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu-doped GaN and its application to environmentally-friendly red light-emitting diodes2014

    • Author(s)
      Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
    • Organizer
      The second International Conference on Advanced Materials and Nanotechnology
    • Place of Presentation
      Hanoi, Vietnam
    • Year and Date
      2014-10-29 – 2014-11-01
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] 希土類元素を極める ―希土類添加半導体から何が見えてくるのか―2014

    • Author(s)
      藤原康文、児島孝徳、Dolf Timmerman、小泉淳
    • Organizer
      日本金属学会2014年秋期講演大会
    • Place of Presentation
      名古屋大学東山キャンパス(名古屋市千種区)
    • Year and Date
      2014-09-24 – 2014-09-26
    • Related Report
      2014 Research-status Report
  • [Presentation] Optical and electrical properties of Eu,Si-codoped GaN grown by organometallic vapor-phase epitaxy2014

    • Author(s)
      A. Koizumi, S. Kuwata, and Y. Fujiwara
    • Organizer
      Energy Materials Nanotechnology Open Access Week
    • Place of Presentation
      Chengdu, China
    • Year and Date
      2014-09-22 – 2014-09-25
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Growth and characterization of Eu-doped GaN by low-temperature organometallic vapor phase epitaxy2014

    • Author(s)
      朱婉新、Timmerman Dolf、小泉淳、藤原康文
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu添加GaNにおけるZn,O共添加による新たなEu発光中心の形成2014

    • Author(s)
      松田将明、朱婉新、児島貴徳、小泉淳、藤原康文
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Research-status Report
  • [Presentation] 二波長励起PL測定によるEu添加GaNのエネルギー輸送効率の評価2014

    • Author(s)
      岡田浩平、若松龍太、Dolf Timmerman、児島貴徳、小泉敦、藤原康文
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Research-status Report
  • [Presentation] 二波長励起PL測定によるEu添加GaNのエネルギー輸送機構の解明2014

    • Author(s)
      岡田浩平,若松龍太,Dolf Timmerman,児島貴徳,小泉淳,藤原康文
    • Organizer
      平成26年度日本材料学会第2回半導体エレクトロニクス部門委員会第1回研究会
    • Place of Presentation
      大阪大学吹田キャンパス(吹田市)
    • Year and Date
      2014-07-26
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu添加GaNに及ぼすO共添加の効果2014

    • Author(s)
      松田将明,李東建,高津潤一,児島貴徳,小泉淳,藤原康文
    • Organizer
      平成26年度日本材料学会第2回半導体エレクトロニクス部門委員会第1回研究会
    • Place of Presentation
      大阪大学吹田キャンパス(吹田市)
    • Year and Date
      2014-07-26
    • Related Report
      2014 Research-status Report
  • [Presentation] Eu添加GaNにおける赤色発光効率のEuイオン局所構造依存性2014

    • Author(s)
      藤原康文、若松龍太、小泉淳
    • Organizer
      第353回蛍光体同学会講演会
    • Place of Presentation
      化学会館ホール(東京都千代田区)
    • Year and Date
      2014-06-06
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Effects of impurity codoping on luminescence properties in Eu-doped GaN2014

    • Author(s)
      Y. Fujiwara, D. Lee, A. Koizumi, B. Mitchell, and V. Dierolf
    • Organizer
      5th International Workshop on Photoluminescence Rare Earths
    • Place of Presentation
      San Sebastian, Spain
    • Year and Date
      2014-05-14 – 2014-05-16
    • Related Report
      2014 Research-status Report
    • Invited
  • [Book] Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics2016

    • Author(s)
      A. Koizumi, B. Mitchell, V. Dierolf, and Y. Fujiwara
    • Total Pages
      22
    • Publisher
      Woodhead Publishing
    • Related Report
      2015 Annual Research Report
  • [Remarks] 藤原研究室

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/

    • Related Report
      2014 Research-status Report

URL: 

Published: 2014-04-04   Modified: 2017-05-10  

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