Fabrication of highly efficient luminescence of rare-earth doped nitride semiconductors by control of local structures around rare-earth ions
Project/Area Number |
26820113
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Multi-year Fund |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Osaka University |
Principal Investigator |
KOIZUMI ATSUSHI 大阪大学, 工学(系)研究科(研究院), 助教 (30418735)
|
Project Period (FY) |
2014-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
Keywords | 希土類添加半導体 / 窒化物半導体 / ユウロピウム / 有機金属気相エピタキシャル法 / 赤色発光ダイオード / 半導体物性 / DLTS / 共添加 |
Outline of Final Research Achievements |
The effects of co-doping on local structures around Eu ions in Eu-doped GaN were investigated to obtain highly efficient excitation of the Eu ions for the application of red light emitting devices using nitride semiconductors. In Eu,Zn,O codoped GaN, a new Eu luminescent center was obtained, while the luminescent center was not observed in Eu-doped GaN and Eu,Zn-codoped GaN. The growth temperature and GaN polarity dependence of the doping of Eu and luminescence properties were investigated. Laplace deep-level transient spectroscopy spectra implied the formation of Eu, N vacancy, and Ga vacancy related defect complex in Eu-doped GaN.
|
Report
(3 results)
Research Products
(50 results)
-
[Journal Article] Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications2016
Author(s)
B. Mitchell, D. Timmerman, J. Poplawsky, W. Zhu, D. Lee, R. Wakamatsu, J. Takatsu, M. Matsuda, W. Guo, K. Lorenz, E. Alves, A. Koizumi, V. Dierolf, and Y. Fujiwara
-
Journal Title
Scientific Reports
Volume: 6
Issue: 1
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] GaN/Eu添加GaNナノ構造によるEu発光効率の著しい増大2015
Author(s)
朱婉新, B. Mitchell, D. Timmerman, 小泉淳, T. Gregorkiewicz, 藤原康文
Organizer
平成27年度第2回半導体エレクトロニクス部門委員会第1回研究会
Place of Presentation
大阪工業大学うめきたナレッジセンター(大阪府・大阪市)
Year and Date
2015-07-11
Related Report
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-