Development of terahertz-wave emitter and detector excited by optical light source with a wavelength at optical waveband region using dilute bismuthide semiconductors
| Project/Area Number |
26820114
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hiroshima University |
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Principal Investigator |
Tominaga Yoriko 広島大学, 先端物質科学研究科, 助教 (40634936)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 低温成長GaAs系半導体 / 分子線エピタキシャル成長 / X線回折法 / 透過型電子顕微鏡 / ラザフォード後方散乱法 / テラヘルツ電磁波 / 光伝導アンテナ |
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| Outline of Final Research Achievements |
The final goal of this study is realization of photoconductive antenna excited by optical light source with a wavelength at optical waveband region using dilute bismuthide (Bi-) semiconductors. In this study period, a Bi Knudsen cell was installed into a molecular beam epitaxial (MBE) growth machine in this researcher's group, and growth temperature dependence of crystalline state of low-temperature-grown (LTG) InGaAs was revealed for comparison of the case of LTG Bi-semiconductors. The results of this study provided guidelines for optimized MBE growth condition of LTG Bi-semiconductors.
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Report
(3 results)
Research Products
(18 results)
