| Project/Area Number |
26820116
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Hyogo |
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Principal Investigator |
Hotta Yasushi 兵庫県立大学, 工学研究科, 准教授 (30418652)
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| Research Collaborator |
TANIWAKI Shota 兵庫県立大学, 工学研究科
YOSHIDA Haruhiko 兵庫県立大学, 工学研究科, 准教授
ARAFUNE Koji 兵庫県立大学, 工学研究科, 准教授
SATOH Shin-ichi 兵庫県立大学, 工学研究科, 特任教授
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | Srシリケイト / シリコン / 固定電荷 / 電界効果パッシベーション / 太陽電池 / ストロンチウムシリケイト / 固定電荷密度 / ストロンチウム / シリケイト / 化学結合状態 / 実効固定電荷密度 / シリコン太陽電池 / 表面パッシベーション |
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| Outline of Final Research Achievements |
We studied strontium silicate (SrxSiOx+2, x = 1, 2, 3) films as field effect passivation layer for c-Si solar cells from the viewpoint of effective net charge density (Qeff). The Qeff values of the SrxSiOx+2/Si (100) samples were obtained from the shift in voltage of the flat band state in their capacitance - voltage curves. The Sr2SiO4/Si (100) (x=2) samples with a thickness of 15 nm annealed at 400 °C showed the maximum Qeff value of 1.03×10^13 Ccm^-2, which is enough positive charge to work as the field effect passivation layer. With increasing annealing temperature, the SrxSiOx+2 layer penetrated into the Si (100) substrate. This penetration may degrade the interfacial properties and decrease the Qeff value of the layers. For all the samples, the charges concentrated near the Sr2SiO4/Si (100) interface. It suggests that anion and cation migration play important roles in charge generation at the SrxSiOx+2/Si (100) interface.
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