| Project/Area Number |
26820118
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Nagano National College of Technology |
|---|
Principal Investigator |
MOMOSE Noritaka 長野工業高等専門学校, その他部局等, 講師 (00413774)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
|---|
| Keywords | 薄膜太陽電池 / 化合物半導体 / 薄膜の作製と評価 / 硫化物 / シリサイド / 裏面電極層 / 硫化防止 |
|---|
| Outline of Final Research Achievements |
In this research, we challenged to develop a new back electrode structure for chalcogenide-semiconductor based thin-film solar cell utilizing a MoSi2 capping layer, which is capable of protecting the sulfurization of Mo back electrode. About a 20-nm-thick MoSi2 thin film, which exhibited a good electrical conductivity and prevented sulfur diffusion to the Mo layer, was deposited onto the Mo electrode layer by sputtering and then post annealing was carried out at 800C for 6 hours. It was also observed that annealing of MoSi2 layer under temperature higher than 700C is necessary in order to achieve both good conductivity and efficient suppression of sulfurization of the Mo electrode. By using capping layer, formation of SnS2 crystals was also observed from the CZTS thin film. This result indicated that selective sulfurization could be realized by using the MoSi2 capping layer.
|
