| Project/Area Number |
26820120
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
CHEN JUN 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA研究員 (90537739)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | SrTiO3 / Resistive switching / Dislocation / EBIC / TEM / Nb doping / Dislocations |
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| Outline of Final Research Achievements |
Material innovation on new devices is indispensable for the advancement of semiconductor technology. With the rising interests in resistance switchable oxides as promising candidates for next generation resistance random access memory, much attention has been paid to investigate the resistance switching in strontium titanate (STO). Compared with silicon, a higher density of dislocations is introduced in STO. Crystallographic defects such as dislocations may play an important role in the resistance switching phenomenon. In this work, the electrical activities of dislocations have been studied by electron-beam-induced current technique. The nature of dislocations has been studied by using transmission electron microscopy. These data suggested that not all the dislocations contribute to the switching phenomenon. The active dislocations for resistance switching were discussed.
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