Minimization of variation and noise of electrical characteristics of MOS transistors due to atomically flat gate insulator film/Si interface
Project/Area Number |
26820121
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Multi-year Fund |
Research Field |
Electron device/Electronic equipment
|
Research Institution | Tohoku University |
Principal Investigator |
Kuroda Rihito 東北大学, 工学(系)研究科(研究院), 准教授 (40581294)
|
Project Period (FY) |
2014-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
|
Keywords | 電子デバイス・電子機器 / 電子デバイス・集積回路 / しきい値ばらつき / ランダム・テレグラフ・ノイズ / 原子レベル平坦化 / 電子デバイス・機器 / ランダムテレグラフノイズ |
Outline of Final Research Achievements |
Atomically flattening technology of Si surface was introduced to a 0.22μm LSI manufacturing technology with shallow trench isolation process, and the atomic flatness of gate insulator/Si interface of MOS transistors was successfully obtained on the whole surface of 200mm diameter Si wafers. Based on the electrical characteristics measurement of over a million transistors, a reduction of threshold voltage variation as well as the one order of magnitude reduction of occurrence probability of random telegraph noise were confirmed and its reduction mechanism was clarified.
|
Report
(3 results)
Research Products
(44 results)
-
[Journal Article] Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation2016
Author(s)
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
-
Journal Title
ECS Journal of Solid State Science and Technology
Volume: 5
Issue: 2
Pages: P67-P72
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
-
-
-
-
-
-
-
[Journal Article] Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern2015
Author(s)
T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S. Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, and K. Shibusawa
-
Journal Title
ECS Transactions
Volume: 66
Issue: 5
Pages: 285-292
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
-
-
-
[Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015
Author(s)
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
-
Journal Title
Japanese Journal of Applied Physics
Volume: 54
Issue: 4S
Pages: 04DA04-04DA04
DOI
NAID
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern2015
Author(s)
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Naoya Akagawa, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai and Katsuhiko Shibusawa
Organizer
227th Meeting of The Electrochemical Society
Place of Presentation
Chicago, USA
Year and Date
2015-05-24
Related Report
Int'l Joint Research
-
[Presentation] Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System2015
Author(s)
Hisaya Sugita, Yasukasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii, Satoru Yamashita, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
Organizer
227th Meeting of The Electrochemical Society
Place of Presentation
Chicago, USA
Year and Date
2015-05-24
Related Report
Int'l Joint Research
-
-
-
-
-
-
[Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers2014
Author(s)
T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and T. Shibusawa
Organizer
2014 International Conference on Solid State Device and Materials
Place of Presentation
つくば国際会議場(茨城県・つくば市)
Year and Date
2014-09-08 – 2014-09-11
Related Report
-
-
[Presentation] A Novel Analysis of Oxide Breakdown based on Dynamic Observation using Ultra-High Speed Video Capturing Up to 10,000,000 Frames Per Second2014
Author(s)
Rihito Kuroda, Fan Shao, Daiki Kimoto, Kiichi Furukawa, Hidetake Sugo, Tohru Takeda, Ken Miyauchi, Yasuhisa Tochigi, Akinobu Teramoto and Shigetoshi Sugawa
Organizer
2014 IEEE International Reliability Physics Symposium
Place of Presentation
Waikoloa, USA
Year and Date
2014-06-03 – 2014-06-05
Related Report
-
-