Graphene terahertz detectors based on plasmons and resonant tunneling
Project/Area Number |
26820123
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Electron device/Electronic equipment
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Research Institution | Tohoku University |
Principal Investigator |
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Research Collaborator |
OTSUJI Taiichi
SUEMITSU Tetsuya
SATOU Akira
RYZHII Victor
WATANABE Takayuki
YADAV Deepika
KURITA Yuki
POPOV Vyacheslav
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Project Period (FY) |
2014-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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Keywords | テラヘルツ / グラフェン / 検出 / プラズモン / 共鳴トンネリング / terahertz / graphene / detectors / resonant tunneling / plasmon / sources |
Outline of Final Research Achievements |
This study was devoted to develop a novel terahertz detector in which the graphene plasmon and quantum-mechanical resonant tunneling are newly introduced as the operation principles. The device consists of a double-graphene-layer in which a tunnel barrier layer is sandwiched by two monolayer-graphene layers and an external gate control element. The device can exploit the photon-assisted resonant tunneling as well as graphene plasmonic resonances as highly sensitive terahertz detection principles. In order to examine the feasibility of the device operation, test devices were fabricated and their property were experimentally measured, confirming the validity of the proposed device structures and the operation principles.
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Report
(3 results)
Research Products
(42 results)
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[Journal Article] Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics2014
Author(s)
Y. Kurita, G. Ducournau, D. Coquillat, A. Satou, K. Kobayashi, S.A. Boubanga-Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
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Journal Title
Appl. Phys. Lett
Volume: 104
Issue: 25
Pages: 251114-251114
DOI
Related Report
Peer Reviewed
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[Presentation] "Graphene active plasmionics for terahertz device applications"2015
Author(s)
T. Otsuji, A. Dubinov, M. Ryzhii, S. Boubanga Tombet, A. Satou, V. Mitin, M.S. Shur, V. Ryzhii
Organizer
SPIE Defense + Security, and Sensing Technology + Applications, Conference 9476 on Automatic Target Recognition XXV
Place of Presentation
Baltimore Convention Center (米国メリーランド州バルチモア市)
Year and Date
2015-04-22
Related Report
Int'l Joint Research / Invited
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[Book] A. Korkin, S. Goodnick, R. Nemanich, Eds., Nanoscale Materials and Devices for Electronics, Photonics, and Solar Energy, Nanostructure Science and Technology [Chapt. 7, "Terahertz wave generation using graphene and compound semiconductor nano-heterostructures"]2015
Author(s)
T. Otsuji, V. Ryzhii, S. Boubanga Tombet, A. Satou, M. Ryzhii, V.V. Popov, W. Knap, V. Mitin, and M. Shur
Total Pages
282
Publisher
Springer, Switzerland
Related Report
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