| Project/Area Number |
26820133
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Information and Communications Technology |
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Principal Investigator |
Matsumoto Atsushi 国立研究開発法人情報通信研究機構, 光ネットワーク研究所 光通信基盤研究室, 研究員 (30580188)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | Intermixing / 量子ドット / 半導体レーザ / 光集積素子 / 集積 / レーザ / 光デバイス |
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| Outline of Final Research Achievements |
In recent years, researches of laser diodes used quantum dot (QD) structure have been progressed, and their high performances have been focused. Also, the researches of optical devices have been studied with the aim of high performance and high functionality, so the optical devices that are not just a single component but various components integrated in a substrate are important. In this study, we developed the intermixing technique, which is one of the integration technology and has not been utilized for the 1550 nm-band QD structure, and we indicated that fabricated QD-LD integrated device has good performances. Also, we clarified one of the physical mechanisms of QD intermixing. Features of this intermixing method are easy fabrication and low cost, and it is expected the intermixing technology is contributed to the various photonic integration devices.
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