| Project/Area Number |
26820136
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | University of Tsukuba (2015)
National Institute of Advanced Industrial Science and Technology (2014) |
|---|
Principal Investigator |
Okamoto Dai 筑波大学, 数理物質系, 助教 (50612181)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
|---|
| Keywords | 炭化珪素 / ＭＯＳＦＥＴ / 界面準位 / ボロン / シリコンカーバイド / MOSFET / チャネル移動度 |
|---|
| Outline of Final Research Achievements |
In order to reduce the high on-resistance of SiC power MOSFETs, it is important to establish a new method to obtain high channel mobility in SiC MOSFETs. In this study, we proposed a new method to reduce the interface state density and obtain high channel mobility. In this method, boron (B) atoms are incorporated into the SiO2/SiC interface. By this method, the interface state density was significantly reduced and high field-effect mobility up to 102 cm2/Vs was obtained. We also investigated the mechanisms of the effect of incorporating other elements, and proposed that the relaxation of interface stress is important for improving interface quality.
|
