Discover of novel lone pair oxide semiconductors
| Project/Area Number |
26820283
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Kyoto University |
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Principal Investigator |
Hayashi Hiroyuki 京都大学, 工学(系)研究科(研究院), 助教 (50727419)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 二価スズ酸化物 / パルスレーザー堆積法 / 第一原理計算 / 電子状態 / パルスレーザー堆積 / ドーパント / ローンペア / 酸化物半導体 |
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| Outline of Final Research Achievements |
Sn(II) oxides display unique electronic structures due to the presence of Sn-5sp electrons. Tin monoxide (SnO), a prototypical Sn(II) oxide with a litharge structure, exhibits p-type conductivity, which is partly due to the shallow valence
band maximum (VBM) constructed from the hybridization of O-2p and Sn-5sp orbitals. In thisstudy, we investigated the crystal growth and properties of Sn(II) complex oxides which have similar electronic structures to SnO, e.g., SnWO4, SnNb2O6, and Sn2Nb2O7. Our theoretical calculations for defect energetics suggests that their electric resistivity is strongly affected by the charge compensation by oxygen vacancies and
cation antisites.
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Report
(3 results)
Research Products
(6 results)
