Integration of Si-based MEMS and GaN-based light emitting devices on Si(111) by low-temperature growth technique

Research Project

Project/Area Number	26870108
Research Category	Grant-in-Aid for Young Scientists (B)
Allocation Type	Multi-year Fund
Research Field	Electronic materials/Electric materials Device related chemistry
Research Institution	The University of Tokyo
Principal Investigator	Jitsuo Ohta 東京大学, 生産技術研究所, 助教 (60392924)
Project Period (FY)	2014-04-01 – 2016-03-31
Project Status	Completed (Fiscal Year 2015)
Budget Amount *help	¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000) Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000) Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywords	GaN / MEMS / Si / スパッタ
Outline of Final Research Achievements	We have investigated the feasibility of integrating GaN-based light emitting devices and Si-based MEMS on Si(111) substrates. The use of AlN buffer layers led to suppression of GaN/Si interfacial reactions and allowed us to control the polarity of GaN films in the low-temperature pulsed sputtering deposition (PSD) process. It was also found that GaN epitaxial growth is possible on the patterned Si substrates. We fabricated GaN-based LEDs and confirmed their successful operation. These results indicate that the PSD low-temperature technique is quite promising as a future fabrication technique for the MEMS integrated with GaN-based optical devices.

Report

(3 results)