| Project/Area Number |
26870188
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Device related chemistry
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Kosuke Matsuzaki 東京工業大学, 元素戦略研究センター, 特任助教 (40571500)
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | マグネタイト / 価数制御 / 構造欠陥 / エピタキシャル薄膜 / ハーフメタリック材料 / 微細構造観察 / 後熱処理 |
|---|
| Outline of Final Research Achievements |
Atomic structural analysis and electronic structure of refined structural defects are studied in high-temperature annealed Fe3O4 thin films. The deviation from film stoichiometry, Fe and FeOx impurities and structural defects grown under non-equilibrium process were extremely reduced by high-temperature annealing in CO/CO2 atmosphere at 1000-1100oC. Existence of stable twin defect were found in the films although the nature of the superexchange interactions across the boundary is not changed in thin film form.
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