Ultra-low power magnetization switching technology for magnetic tunnel junctions using inverse magnetostrictive effect
| Project/Area Number |
26870192
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Nanostructural physics
Electron device/Electronic equipment
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
Takamura Yota 東京工業大学, 大学院理工学研究科, 助教 (20708482)
|
|---|
| Research Collaborator |
Nakagawa Shigeki 東京工業大学, 大学院理工学研究科, 教授 (60180246)
Sugahara Satoshi 東京工業大学, 像情報工学研究所, 准教授 (40282842)
Funakubo Hiroshi 東京工業大学, 大学院理工学研究科, 教授 (90219080)
Kurosawa Minoru. K. 東京工業大学, 大学院総合理工学研究科, 准教授 (70170090)
Yamamoto Shu'uichiro 東京工業大学, 像情報工学研究所, 特任講師 (50313375)
Shuto Yusuke 東京工業大学, 像情報工学研究所, 特任助教 (80523670)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
|---|
| Keywords | 逆磁歪効果 / 磁気抵抗変化素子 / スピントランスファートルク / ＭＲＡＭ / スピン注入磁化反転 / スピントロニクス / サマリウム鉄 / 超磁歪 / 圧電体 / 逆ピエゾ効果 |
|---|
| Outline of Final Research Achievements |
Inverse-magnetostrictive magnetic tunnel junctions (IMS-MTJs) that consist of a MTJ with a large magnetostrictive ferromagnetic free layer and piezo-electric materials surrounding the MTJs were proposed. The critical current density JC for the magnetization switching of the IMS-MTJs were analyzed by simulation using the LLG equation. JC for the IMS-MTJs can be reduced by 1/10 compared to that for the conventional MTJs, which corresponds to the reduction by 1/400 in the consumption energy. Moreover, SmFe2 films formed by sputtering system were investigated.
|
Report
(3 results)
Research Products
(13 results)
