Control of defects and carrier density in GeSn layer
| Project/Area Number |
26870261
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Research Collaborator |
ASANO Takanori
IKE Shiniti
INUZUKA Yuki
WASHIZU Tomoya
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | Ⅳ族混晶半導体 / GeSn / 格子欠陥 / 結晶成長 / DLTS / キャリア密度制御 / 欠陥制御 / MBE / MOCVD / 欠陥 / 成長 / イオン注入 / 回復処理 / 欠陥評価 / ゲルマニウムースズ / DLTS測定 / 水素成長 / 水素の効果 / ドーパント不活性化抑制 |
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| Outline of Final Research Achievements |
In order to realize GeSn devises, we need to control shallow- and deep-level defects density in a GeSn layer since the shallow- and deep-level defects act as carrier and recombination centers, respectively. These defects cause degradation of device properties. In this study, in order to control these defects density, we investigated electrical active defects in a GeSn layer grown by molecular beam epitaxy and chemical vapor deposition methods. We observed shallow-level defect at near valence band and deep-level defects at near midgap in the GeSn layer. We suggested that these defects are Sn-related complex defects by comparison experiment of the Sn ion implantation into the Ge substrate. We found that hydrogen introduction during a GeSn growth causes a reduction of deep-level defects in the GeSn layer. Addition, the deep-level defects can be annihilated by thermal annealing.
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Report
(4 results)
Research Products
(34 results)
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[Presentation] Sn系IV族半導体混晶薄膜の成長と物性評価2016
Author(s)
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
Organizer
電子情報通信学会 シリコン材料・デバイス研究会（SDM）, 有機エレクトロニクス研究会（OME）共催
Place of Presentation
沖縄県立博物館・美術館
Year and Date
2016-04-08
Related Report
Invited
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[Presentation] Behaviors of tin related defects in Sb doped n-type germanium2015
Author(s)
W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima
Organizer
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
Place of Presentation
Japan
Year and Date
2015-01-29 – 2015-01-30
Related Report
Invited
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[Presentation] Hydrogen Surfactant Epitaxy of Ge1-xSnx Layers2014
Author(s)
T. Asano, N. Taoka, K. Hozaki, W. Takeuchi,M. Sakashita, O. Nakatsuka, and S. Zaima
Organizer
JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
Place of Presentation
Belgium
Year and Date
2014-11-13 – 2014-11-14
Related Report
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[Presentation] n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用2014
Author(s)
竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
Organizer
電子情報通信学会 シリコン材料・デバイス研究会（SDM）,電子デバイス研究会（ED）,電子部品・材料研究会（CPM）共催
Place of Presentation
名古屋大学、日本
Year and Date
2014-05-28 – 2014-05-29
Related Report
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