| Project/Area Number |
26870351
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
Optical engineering, Photon science
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | フォトニック結晶 / 光共振器 / 希土類 / エルビウム / GaAs / 発光制御 |
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| Outline of Final Research Achievements |
We studied emission properties of Er3+ ions embedded in GaAs-based two-dimensional photonic crystal nanocavity. We have grown Er,O co-doped GaAs slab layer by organometallic vapor phase epitaxy. Photonic crystal structures were fabricated by electron beam lithography and plasma etching technique. Numerical simulation using Finite-difference time-domain(FDTD) method was performed and it predicted emission enhancement of 5.4 times. This prediction was compared with the photoluminescence measurement, however, the experimental emission enhancement was 20 times, which exceeded the prediction. This extra enhancement might be due to the interaction among Er ions in the nanocavity, such as superradiant.
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