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Fabrication of High Dielectric Ultrathin-Film Utilizing Inactivated Si(110) Single Domain Surface and Evaluation of Its Physical Property

Research Project

Project/Area Number 26870416
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Condensed matter physics I
Research InstitutionEhime University

Principal Investigator

Kakiuchi Takuhiro  愛媛大学, 理工学研究科, 講師 (00508757)

Project Period (FY) 2014-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Keywords薄膜 / 表面物性 / 界面物性 / 光電子分光 / コインシデンス分光 / 半導体 / 高誘電体 / MOS-FET / 高誘電体材料 / 局所価電子状態 / Si(110) / シングルドメイン / 超薄膜 / 表面界面 / 表面界面物性 / 酸化ハフニウム / 光電子分光法
Outline of Final Research Achievements

In this study, we have fabricated the ultra-thin hafnium dioxide (HfO2) film with a high dielectric constant on clean Si(110)-16x2 surface, which is a next-generation Si substrate material, for sustainable semiconductor device development. And, we have evaluated the physical properties at interface of Hf/SiOx/Si(110) and HfO2/SiOx/Si(110) ultrathin films with photoelectron spectroscopy and coincidence spectroscopy. As a result, we have observed the difference structures of Si L23VV Auger-electron spectra at same SiOx interface components between Hf/SiOx/Si(110) and HfO2/SiOx/Si(110). These results indicate that physical property at interface where has same SiOx components is different depending on chemical state and structure of Hf located at surface. From our result, the development of atomic scale semiconductor device needs control of physical property at interface.

Report

(3 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • Research Products

    (10 results)

All 2016 2015 2014

All Presentation (10 results) (of which Int'l Joint Research: 2 results)

  • [Presentation] Si(110)-16x2シングルドメイン表面上に作製したSiO2超薄膜の膜厚に依存した表面局所価電子状態の変化2016

    • Author(s)
      垣内拓大、池田恭平、長岡伸一、間瀬一彦
    • Organizer
      2015年度量子ビームサイエンスフェスタ(第33回PFシンポジウム)
    • Place of Presentation
      つくば国際会議場、茨城県つくば市
    • Year and Date
      2016-03-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] Si(110)-16x2シングルドメイン表面上に作製したHfおよびHfO2超薄膜の界面を選別した局所価電子状態2016

    • Author(s)
      垣内拓大、池田恭平、長岡伸一、間瀬一彦
    • Organizer
      2015年度量子ビームサイエンスフェスタ(第33回PFシンポジウム)
    • Place of Presentation
      つくば国際会議場、茨城県つくば市
    • Year and Date
      2016-03-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] X線光電子分光法、光電子-オージェ電子分光法による水素吸着Si(110)-16x2シングルドメイン表面の研究2015

    • Author(s)
      垣内拓大、中納佑二、長岡伸一、間瀬一彦
    • Organizer
      2015年真空・表面科学合同講演会
    • Place of Presentation
      つくば国際会議場、茨城県つくば市
    • Year and Date
      2015-12-01
    • Related Report
      2015 Annual Research Report
  • [Presentation] 低速電子回折と光電子分光法によるHf蒸着Si(110)-16x2シングルドメイン表面の研究2015

    • Author(s)
      垣内拓大、桂木拓磨、中納佑二、長岡伸一、間瀬一彦
    • Organizer
      2015年真空・表面科学合同講演会
    • Place of Presentation
      つくば国際会議場、茨城県つくば市
    • Year and Date
      2015-12-01
    • Related Report
      2015 Annual Research Report
  • [Presentation] Hafnium adsorption to clean Si(110)-16x2 single domain surface studied with photoelectron spectroscopy2015

    • Author(s)
      Takuhiro Kakiuchi, Takuma Katsuragi, Yuji Nakano, Shin-ichi Nagaoka, Kazuhiko Mase
    • Organizer
      13th International conference on electronic structure and spectroscopy
    • Place of Presentation
      Stony Brook University, Stony Brook NY, USA
    • Year and Date
      2015-09-28
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Hydrogen adsorption to clean Si(110)-16x2 single domain surface and its chemical states2015

    • Author(s)
      Takuhiro Kakiuchi, Yuji Nakano, Shin-ichi Nagaoka, Kazuhiko Mase
    • Organizer
      13th International conference on electronic structure and spectroscopy
    • Place of Presentation
      Stony Brook University, Stony Brook NY, USA
    • Year and Date
      2015-09-28
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Si(110)-16×2シングルドメイン清浄表面への水素吸着過程とその表面物性2015

    • Author(s)
      垣内拓大,中納佑二,長岡伸一,間瀬一彦
    • Organizer
      第3回物構研サイエンスフェスタ(第32回PFシンポジウム)
    • Place of Presentation
      つくば国際会議場(茨城県・つくば市)
    • Year and Date
      2015-03-17 – 2015-03-18
    • Related Report
      2014 Research-status Report
  • [Presentation] Surface Structure and Local Valence Electronic States of Si(110)-16×2 Surface after Exposure to Water: XPS and Auger-Photoelectron Coincidence Study2014

    • Author(s)
      T. Kakiuchi, S. Nishiura1, J. Kawamoto1, S. Nagaoka, K. Mase
    • Organizer
      Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
    • Place of Presentation
      Hapuna Beach Prince Hotel (Kohala coast, Hawaii, USA)
    • Year and Date
      2014-12-07 – 2014-12-11
    • Related Report
      2014 Research-status Report
  • [Presentation] 水の解離吸着によるSi(110)-16×2清浄面の表面構造と局所価電子状態の変化2014

    • Author(s)
      垣内拓大,西浦伸吾,川本淳滋,長岡伸一,間瀬一彦
    • Organizer
      第34回表面科学学術講演会
    • Place of Presentation
      くにびきメッセ(島根県・松江市)
    • Year and Date
      2014-11-06 – 2014-11-08
    • Related Report
      2014 Research-status Report
  • [Presentation] Si(110)-16×2清浄表面へのH2O解離吸着:表面物性と表面1次元構造の変化2014

    • Author(s)
      垣内拓大,西浦伸吾,川本淳滋,長岡伸一,間瀬一彦
    • Organizer
      第8回分子科学討論会
    • Place of Presentation
      広島大学(広島県・東広島市)
    • Year and Date
      2014-09-21 – 2014-09-24
    • Related Report
      2014 Research-status Report

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Published: 2014-04-04   Modified: 2020-05-15  

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