Fabrication of High Dielectric Ultrathin-Film Utilizing Inactivated Si(110) Single Domain Surface and Evaluation of Its Physical Property
| Project/Area Number |
26870416
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | Ehime University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 薄膜 / 表面物性 / 界面物性 / 光電子分光 / コインシデンス分光 / 半導体 / 高誘電体 / MOS-FET / 高誘電体材料 / 局所価電子状態 / Si(110) / シングルドメイン / 超薄膜 / 表面界面 / 表面界面物性 / 酸化ハフニウム / 光電子分光法 |
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| Outline of Final Research Achievements |
In this study, we have fabricated the ultra-thin hafnium dioxide (HfO2) film with a high dielectric constant on clean Si(110)-16x2 surface, which is a next-generation Si substrate material, for sustainable semiconductor device development. And, we have evaluated the physical properties at interface of Hf/SiOx/Si(110) and HfO2/SiOx/Si(110) ultrathin films with photoelectron spectroscopy and coincidence spectroscopy. As a result, we have observed the difference structures of Si L23VV Auger-electron spectra at same SiOx interface components between Hf/SiOx/Si(110) and HfO2/SiOx/Si(110). These results indicate that physical property at interface where has same SiOx components is different depending on chemical state and structure of Hf located at surface. From our result, the development of atomic scale semiconductor device needs control of physical property at interface.
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Report
(3 results)
Research Products
(10 results)
