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Development of stable radical-substituted electron-transporting amorphous molecular materials and its thin-film fabrications

Research Project

Project/Area Number 26870424
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Organic and hybrid materials
Functional solid state chemistry
Research InstitutionNagoya University

Principal Investigator

Tanaka Hiroyuki  名古屋大学, 理学(系)研究科(研究院), 特任助教 (40547832)

Project Period (FY) 2014-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Keywords電子スピン / アモルファス分子材料 / 電子輸送性材料 / 薄膜作製 / 安定有機ラジカル / アモルファス薄膜 / 薄膜デバイス
Outline of Final Research Achievements

In order to control the state of electron spins in the electron-transporting amorphous thin film, novel stable neutral radical-substituted electron-transporting molecular materials were developed, in which tert-butyl nitroxide was introduced into 2,4,6-tri-phenyl-1,3,5-triazine of the electron-accepting moiety with m-phenylene-type linkage. By means of in-situ measurements of cyclic voltammetry and continuous wave-electron spin resonance spectrum at a low temperature, ferromagnetic exchange interaction (J > 0) between the anion radical on the triazine-acceptor moiety and the nitroxide radical was detected in a solution state. For application to thin-film devices, fabrication of amorphous thin films from the solution was performed by spin-coating method. The amorphous state of the obtained thin films was revealed by XRD measurements and AFM observations.

Report

(3 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report

URL: 

Published: 2014-04-04   Modified: 2017-05-10  

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