| Project/Area Number |
26870815
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
Crystal engineering
|
|---|
| Research Institution | National Institute of Technology, Kumamoto College |
|---|
Principal Investigator |
TSUNODA Isao 熊本高等専門学校, 情報通信エレクトロニクス工学科, 准教授 (00585200)
|
|---|
| Project Period (FY) |
2014-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
|---|
| Keywords | 結晶成長 / 半導体 / 低温結晶成長 / ゲルマニウム / シリコンゲルマニウム / 非熱エネルギー |
|---|
| Outline of Final Research Achievements |
The low temperature (≦150℃) formation technique for crystalline Ge on insulating substrate have been investigated. We have clearly confirmed that the solid phase crystallization significantly enhanced by utilizing both electron beam irradiation and stress stimulation. In particularly, when stress stimulation utilized, low temperature (～150℃) crystallization for amorphous Ge on insulating substrate was realized. Furthermore, we have realized that the orientation controlled crystalline Ge on insulating substrate by catalytic metal localization during low temperature crystallization (～200℃).
|
