Dielectric Breakdown of Hexagonal Boron Nitride Film for Gate Insulator
| Project/Area Number |
26886003
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Nanostructural physics
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Hattori Yoshiaki 東京大学, 工学(系)研究科(研究院), 研究員 (90736654)
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| Project Period (FY) |
2014-08-29 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | h-BN / 絶縁破壊 |
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| Outline of Final Research Achievements |
Hexagonal boron nitride (h-BN) is considered as ideal substrate for 2D material devises. However, the reliability of insulating properties of h-BN itself has not been clarified yet. The anisotropic dielectric breakdown of h-BN has been studied. We have found that the dielectric breakdown in c axis direction using a conductive atomic force microscope proceeded in the layer-by-layer manner. The obtained dielectric field strength was ~12 MV/cm, which is comparable to the conventional SiO2. On the other hand, metal electrodes were fabricated on the h-BN surface to measure the dielectric field strength in a direction perpendicular to c axis. The dielectric field strength was estimated to be 3 MV/cm, which is the smaller than that in c axis direction.
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Report
(3 results)
Research Products
(9 results)
