| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
Hexagonal boron nitride (h-BN) is considered as ideal substrate for 2D material devises. However, the reliability of insulating properties of h-BN itself has not been clarified yet. The anisotropic dielectric breakdown of h-BN has been studied. We have found that the dielectric breakdown in c axis direction using a conductive atomic force microscope proceeded in the layer-by-layer manner. The obtained dielectric field strength was ~12 MV/cm, which is comparable to the conventional SiO2. On the other hand, metal electrodes were fabricated on the h-BN surface to measure the dielectric field strength in a direction perpendicular to c axis. The dielectric field strength was estimated to be 3 MV/cm, which is the smaller than that in c axis direction.
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