| Budget Amount *help |
¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
The purpose of this research is to fabricate single-electron devices by bottom-up processes using all-inorganic co-doped silicon nanocrystals. Fabricated single-electron transistor consists of co-doped silicon nanocrystals (diameter: 7 nm), Au nanogap electrodes, and self-assembled monolayers. The single-electron transistor shows Coulomb diamonds in a stability diagram at a temperature of 9 K. This result indicates that multiple co-doped silicon nanocrystals are involved in a current transport of the device.
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