| Project/Area Number |
26886017
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Shiota Yoichi 国立研究開発法人産業技術総合研究所, スピントロニクス研究センター, 研究員 (70738070)
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| Project Period (FY) |
2014-08-29 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | スピントロニクス / 電圧誘起磁気異方性制御 / 磁化反転 |
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| Outline of Final Research Achievements |
In this study, we investigate the approach to reduce the switching voltage in voltage-induced magnetic anisotropy change, which is writing process of voltage-driven MRAM. First, we investigate the perpendicular magnetic anisotropy and voltage effect in FeB/MgO junctions with different capping layer of Ta, W, or Ir. We found that FeB with Ta and W shows the perpendicular magnetization. Then we performed the switching probability of voltage-induced magnetization switching. We found that small perpendicular magnetic anisotropy is key to reduce the switching voltage. However, small perpendicular magnetic anisotropy results in the small thermal stability, which is not suitable for practical application. From the simulation, we found the another method to reduce the switching voltage.
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