Project/Area Number |
26889073
|
Research Category |
Grant-in-Aid for Research Activity Start-up
|
Allocation Type | Single-year Grants |
Research Field |
Electron device/Electronic equipment
|
Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
Atsumi Yuki 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 研究員 (30738068)
|
Project Period (FY) |
2014-08-29 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
Keywords | シリコンフォトニクス / 偏波ビームスプリッタ / 多層光配線 / 偏波分離素子 / 三次元光集積回路 |
Outline of Final Research Achievements |
Silicon photonics has the potential to provide high-density signal transmission for interconnection in a datacenter. Recently, multilayered three-dimensional Si photonics integrated circuits (Si-PICs) have been researched to enhance circuit integration capacity and for partial waveguide bridges to reduce the loss of the numerous waveguide crossings. In this research, I proposed a compact Si interlayer polarization beam splitter (PBS) and a Si interlayer optical switch that are based on a crystalline Si (c-Si) and hydrogenated amorphous Si (a-Si:H) vertical asymmetrical directional coupler.The device with a 260-nm × 220-nm and a 340-nm × 200-nm waveguides operates in a broadband, with small insertion loss and crosstalk. The device is also robust in terms of alignment error between the vertical waveguides. Totally, the proposed device seems to be feasible.
|