Growth interfaces of crystals
| Project/Area Number |
58420019
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Gakushuin University |
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Principal Investigator |
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| Project Period (FY) |
1983 – 1985
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| Project Status |
Completed (Fiscal Year 1985)
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| Budget Amount *help |
¥19,900,000 (Direct Cost: ¥19,900,000)
Fiscal Year 1985: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1984: ¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1983: ¥11,400,000 (Direct Cost: ¥11,400,000)
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| Keywords | Crystal growth / 溶液の物性 |
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| Research Abstract |
Crystal growth is one of most impotant techniques in material science and technology and then it is a worth-while research to make clear structure of interfaces during crystal growth, because the quality of crystals will be determined by incorporation of the growth units at the interfaces.
Physical and chemical studies on saturated solutions were done precisely to analyze the crystal growth phenomenologically. The concentration and temperature gradient around crystals growing in a two dimensional cell were measured at the growth interface, and the growth rate of the crystals was found to be proportional to the normal component of those gradient. The diffusion coefficient from the ratio of the growth rate to the concentration gradient is in a good agreement with the diffusion constant of the solute in the solution obtained by usual method. It is thus proposed that the molecular state of the solute in saturated solution is very similar to its crystalline state.
A sort of roughness on the interface is necessary for crystal growth and then the morphological steps are discussed by using two dimensional Fourier transform to obtain spacial frequency of the structure on the interface.
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Report
(1 results)
Research Products
(9 results)
