| Co-Investigator(Kenkyū-buntansha) |
KISHI KUMEYO FACULTY OF ENGINEERING, NAGOYA UNIVERSITY, 工学部, 助手 (20023129)
TAKAMURA SHUICHI FACULTY OF ENGINEERING, NAGOYA UNIVERSITY, 工学部, 助教授 (40023254)
SUGAI HIDEO FACULTY OF ENGINEERING, NAGOYA UNIVERSITY, 工学部, 助教授 (40005517)
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| Budget Amount *help |
¥36,000,000 (Direct Cost: ¥36,000,000)
Fiscal Year 1986: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1985: ¥8,000,000 (Direct Cost: ¥8,000,000)
Fiscal Year 1984: ¥26,500,000 (Direct Cost: ¥26,500,000)
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| Research Abstract |
PHYSICAL AND CHEMICAL PROCESSES IN PLASMA-SURFACE INTERACTIONS ARE BASICALLY STUDIED FROM THE STANDPOINTS OF NUCLEAR FUSION RESEARCH AND PLASMA PROCESSING TECHNIQUES. ON THE BASIS OF THIS RESULT, THE METHODS TO CONTROL THE PLASMA-WALL INTERACTIONS ARE INVESTIGATED.
FIRST OF ALL, IMPURITY GENERATION MECHANISMS ARE INVESTIGATED IN CONNECTION WITH RADIO FREQUENCY HEATING: THE RF FIELDS MAY SUPPRESS OR PROMOTE THE PLASMA-INDUCED ARC, DEPENDING ON THE FREQUENCY. CONCERNING AN IMPURITY INJECTION BY LASER BLOW-OFF, THE COMPOSITION OF BLOW-OFF PARTICLES ARE MEASURED AND THE INTERACTION WITH A DISCHARGE PLASMA IS EXAMINED.
ON THE OTHER HAND, PHYSICAL AND CHEMICAL PROCESSES IN A DISCHARGE CLEANING ARE DISTINGUISHED, IN COMPARISON OF RARE GAS DISCHARGE WITH HYDROGEN DISCHARGE. THE BEHAVIOR OF IMPURITY GASES IS DEMONSTRATED, WHICH LEADS TO A PROPOSAL OF A NEW CLEANING TECHNIQUE UTILIZING OXYGEN GAS.
PLASMA-ASSISTED CARBON COATING, WHICH HAS RECENTLY BEEN NOTED AS A NEW WAY OF WALL MODIFICATION, ARE SYSTEMATICALLY STUDIED ABOUT THE CORRELATION OF COATING CONDITIONS AND FILM PROPERTIES. AS A RESULT, THE EFFECTIVE SCHEME OF REDUCING THE HYDROGEN CONTENT OF FILMS IS FOUND: A HIGH WALL TEMPERATURE, A LARGE ION IMPACT ONTO WALLS, AND ACETYLENE DISCHARGE RATHER THAN METHANE DISCHARGES. ON THE OTHER HAND, IN-SITU BORON COATING OF WALLS IS PERFORMED IN THE FIRST TIME, AND THE ADVANTAGES OF THE NEW LOW-Z MATERIAL, BORON, ARE PROVED. ALSO, HYDROGEN RECYCLING OF WALLS COATED BY CARBON OR BORON IS EXAMINED, WHERE THE CONTROL OF RECYCLING RATE BY HELIUM GLOW DISCHARGE IS SHOWN. FINALLY, THE GROWTH OF HYDROGENATED AMORPHOUS SILICON FILMS ARE STUDIED IN VIEW OF PLASMA PROCESSING. HERE, THE IMPORTANT ROLE OF HYDROGENS IN THE GROWTH PROCESSES IS FOUND, USING A NEW TECHNIQUE OF FLUX CONTROLLED DEPOSITION.
A SERIES OF INVESTIGATIONS STATED ABOVE SUGGESTS THAT IN MANY CASES A SHEATH IS A KEY POINT IN CONTROL OF PLASMA WALL INTERACTIONS.
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