| Project/Area Number |
59420048
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
結晶学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
TAKAYANAGI Kunio Tokyo Institute of Technology, assoc. professor, 理学部, 助教授 (80016162)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Naoki Tokyo Institute of Technology, asistant, 理学部, 助手 (90108184)
TANISHIRO Yasumasa Tokyo Institute of Technology, asistant, 理学部, 助手 (40143648)
YAGI Kastumichi Tokyo Institute of Technology, professor
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| Project Period (FY) |
1984 – 1986
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| Project Status |
Completed (Fiscal Year 1986)
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| Budget Amount *help |
¥35,900,000 (Direct Cost: ¥35,900,000)
Fiscal Year 1986: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1985: ¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 1984: ¥26,500,000 (Direct Cost: ¥26,500,000)
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| Keywords | UHV electron microscope / 7x7 reconstruction of silicon surface / surface structure analysis by transmission electron diffraction / 透過回析法による表面構造解析 / 高分解能反射顕微鏡法 / 金原子とクラスター構造の高分解能観察 / 表面・結晶成長のミクロプロセス / 表面 / 結晶成長 / 表面再配列構造 / 吸着構造 |
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| Research Abstract |
A new high resolution UHV (ultra-high vacuum ) electron microscope has been developed for in-situ surface study at atomic level resolution. The microscope has the vacuum of <10^(-8)> level after baking at 100 ゜ C and the resolution of 0.22 nm. With deposition facilities, metals and semiconductor materials were deposited on substrate surfaces places at the specimen position in-situ in the microscope. Surface processes, then, are imaged in transmission and reflection electron microscopy and diffraction.
We performed in-situ surface studies for Si(111)7x7 reconstruction and the phase transition, for metal adsorption on Si surface and for metal cluster. By transmission electron diffraction, the reconstructed Si(111)7x7 surface was found to have dimer adatom stacking-fault (DAS) structure. Adsorption processes of Ag, Au, Cu and Al on the 7x7 surface were observed by reflection electron microscopy. Surface steps were found to work as the nucleation site. Phase transition of Si(111)7x7 process was observed by high resolution reflection microscopy, 2.3 nm spaced superlattice fringes being resolved. The phase boundary between the 7x7 and "1x1" structure was found to be vary narrow throughout the transition process. In addition to these studies, structures and dynamical behavior of clusters consisting a few to several tens of Au atoms were seen at atomic level.
The high resolution UHV electron microscopy, thus, is useful for basic and applied surface science.
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