| Project/Area Number |
59850006
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Sendai National College of Technology |
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Principal Investigator |
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| Project Period (FY) |
1984 – 1985
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| Project Status |
Completed (Fiscal Year 1985)
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| Budget Amount *help |
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1985: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1984: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | Polycrystalline silicon / Solar cells / Grain boundariespassivation / 不動態化 |
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| Research Abstract |
Preparation of silcon films for solar cells; Preparation conditions of silicon thin films by the method of melt quenching were experimentally clarified especially on the relation of film dimentions and preparation parameters. These parameters were ejection pressure, atmospheric pressure, disc rotation speed, preparation speed, disc materials and atmospheric gases. Hydrodynamic analysis well interpreted these experimental results quntitatively.
Electronic density of states at grain boundaries; The electronic conductivities and temperature dependence of Hall mobilities were measured on the undoped and intentionally boron and phosphorus doped samples. Double schottky barrier model which made double depletion layers at grain boundaties and works as sink for the photogenerated carries and reduce the collection efficiency. Field dependent conductivites under DC bias voltage were well interpreted qualitatively as the carrier transport through the thermionic emission across over the grain boundaries potential barriers.
Grain boundaries electric field observation technique; A new method to analize electrically active grain boundaries of polycrystalline silicon by using a field effect of nematic liquid crystal with positive dielectric anisotropy is developed.
Plasma passivation of grain boundaries were experimentally recognized.
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