| Project/Area Number |
59850047
|
|---|
| Research Category |
Grant-in-Aid for Developmental Scientific Research
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子材料工学
|
|---|
| Research Institution | Hokkaido University |
|---|
Principal Investigator |
大野 英男 北海道大学, 工学部, 助教授
|
|---|
| Project Period (FY) |
1984 – 1985
|
| Project Status |
Completed (Fiscal Year 1985)
|
| Budget Amount *help |
¥8,600,000 (Direct Cost: ¥8,600,000)
Fiscal Year 1985: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 1984: ¥4,100,000 (Direct Cost: ¥4,100,000)
|
|---|
| Keywords | heterojunction / GaAs / selective doping / CCD / MOVPE / 有機金属気相成長 / MOVPE / MBE |
|---|
| Research Abstract |
1. Characterization of interrupted MOVPE growth interface
Interruption of MOVPE growth is usually used to realize sharp doping profiles as well as sharp composition profiles. The effect of such a growth interruption on the electrical characteristics of the interface is investigated using C-V profiling and DLTS. When the interrupted interface is exposed to air, formation of deep levels with broad energy spectrum similar to the interface state density distribution at insulator-semiconductor structure are detected. This deep level formation is attributed to the disordering of interface atom regularity based on the unified disorder induced gap state model.
2. DX centers in AlGaAs
DX centers in AlGaAs play a dominant role in determining the threshold voltages of selectively doped heterostructure devices. The origin of the DX centers was, however, not clarified in spite of their importance. A new model is proposed for DX centers in which anti-bonding state of donor impurity-host bond is attributed to be the origin of the DX center. This model is based on the lineup of DX centers with respect of hybrid orbital energy of the host, suggesting the bonding-antibonding splitting of the electronic state.
3. Generation of carriers at the heterojunction interface
Generation rate of interface electrons at selectively doped heterojunction interfaces is measured using CCD structures. It is shown that the generation rate is determined solely by the reverse current of the Al/AlGaAs Schottky barrier. The reverse current is mainly composed of generationrecombination current.
4. Fabrication and operation of selectively doped heterojunction CCDs
Selectively doped heterojunction CCDs are fabricated using self-aligned process to maintain the separation of electrodes in the submicron range. The successful operation of CCDs at 167 KHz is confirmed.
|
