| Project/Area Number |
59850052
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | HIROSHIMA UNIVERSITY |
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Principal Investigator |
HIROSE Masataka Department of Engineering, Hiroshima University, Professor, 工学部, 教授 (10034406)
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| Co-Investigator(Kenkyū-buntansha) |
HAYASHI Toshio Department of Research Development, ULVAC Corporation, Chief Engineer, 技術開発部, 専門室長
小宮 宗治 日本真空技術K.K, 技術開発本部, 部長
YOKOYAMA Shin Institute of Materials Science, University of Tsukuba, Assistant Professor, 物質工学系, 講師 (80144880)
KOMIYA Nobuharu Department of Research Development, ULVAC Corporation, Head Manager
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| Project Period (FY) |
1984 – 1986
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| Project Status |
Completed (Fiscal Year 1986)
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| Budget Amount *help |
¥20,200,000 (Direct Cost: ¥20,200,000)
Fiscal Year 1986: ¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 1985: ¥5,700,000 (Direct Cost: ¥5,700,000)
Fiscal Year 1984: ¥10,700,000 (Direct Cost: ¥10,700,000)
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| Keywords | Photochemical Etching / Vacuum Ultra-Violet / Photochemical Reaction / 真空紫外光 |
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| Research Abstract |
Thermally grown silicon dioxide (Si <O_2> ), crystalline Gallium Arsenide (GaAs) and silicon (Si) surfaces was exposed to an etching gas under an ArF excimer laser irradiation. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. Reaction kinetics of photochemical etching and resulting products on the solid surfaces have been revealed from the chemical shifts of adsorbates and substrate atoms. Etching products in Si <O_2> /(N <F_3> + <H_2> ) system are confirmed to be Si <F_4> , <N_2> O, and N <O_2> . For the etching of GaAs in HCl, Ga <Cl_3> and As <Cl_3> are found to be the most probable products in the gas phase. The photoluminescence measurements and the current-voltage characteristics of the Schottky barrier diodes indicate that the surface-defect density of the photochemically-etched sample is as low as that of the conventional wet etching. In the case of the etching of Si in N <F_3> , it was found that Si <F_X> (1 <-!<> X <-!<> 4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly Si <F_4> and Si <F_3> . A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.
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